X-ray scattering techniques for assessment of III-V wafer bonding

Journal of Physics D: Applied Physics

Volumn 36, Issue 10 A, 2003, Pages

  Hayashi, S ^a   Bruno, D ^a   Sandhu, R ^a,b   Goorsky, M S ^a  

^a Engineering IV   (United States)

^b NORTHROP GRUMMAN CORPORATION   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DISLOCATIONS (CRYSTALS); PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTING INDIUM PHOSPHIDE; SILICON NITRIDE; SILICON ON INSULATOR TECHNOLOGY; SPUTTERING; STRAIN; SURFACE ROUGHNESS; THIN FILMS;

CRYSTALLINE QUALITY; HIGH RESOLUTION X RAY RECIPROCAL SPACE MAPPING; SEMICONDUCTOR WAFER BONDING; TENSILE STRAIN; VOID INDUCED DEFECTS; X RAY REFLECTIVITY; X RAY TOPOGRAPHY;

X RAY SCATTERING;

EID: 0038282862     PISSN: 00223727     EISSN: None     Source Type: Journal    
DOI: 10.1088/0022-3727/36/10A/349     Document Type: Article

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