Si epitaxial growth on SiH 3 CH 3 reacted Ge(1 0 0) and intermixing between Si and Ge during heat treatment

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 193-196

  Takahashi, Kazuya ^a   Fujiu, Masaki ^a   Sakuraba, Masao ^a   Murota, Junichi ^a  

^a TOHOKU UNIVERSITY   (Japan)

Author keywords

Ge(1 0 0); Heterointerface; Interdiffusion; Si epitaxial growth; SiH 3 CH 3

Indexed keywords

CHEMICAL VAPOR DEPOSITION; EPITAXIAL GROWTH; ETCHING; GERMANIUM; HEAT TREATMENT; X RAY PHOTOELECTRON SPECTROSCOPY;

HETEROINTERFACE;

SILICON COMPOUNDS;

EID: 0038241669     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00069-2     Document Type: Conference Paper

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