-
1
-
-
0025502747
-
Lateral-mode selectivity in an external-cavity diode laser with residual facet reflectivity
-
W. F. Sharfin, A. Mooradian, C. M. Harding, and R. G. Waters, “Lateral-mode selectivity in an external-cavity diode laser with residual facet reflectivity,” IEEE J. Quantum Electron. 23, 1756-1763 (1990).
-
(1990)
IEEE J. Quantum Electron.
, vol.23
, pp. 1756-1763
-
-
Sharfin, W.F.1
Mooradian, A.2
Harding, C.M.3
Waters, R.G.4
-
2
-
-
0000489684
-
Simple high-coherence rapidly tunable external-cavity diode laser
-
B. Boggs, C. Greiner, T. Wang, H. Lin, and T. W. Mossberg, “Simple high-coherence rapidly tunable external-cavity diode laser,” Opt. Lett. 23, 1906-1908 (1998).
-
(1998)
Opt. Lett.
, vol.23
, pp. 1906-1908
-
-
Boggs, B.1
Greiner, C.2
Wang, T.3
Lin, H.4
Mossberg, T.W.5
-
3
-
-
0001060711
-
External cavity diode lasers with different devices and collimating optics
-
D. M. Kane and A. P. Willis, “External cavity diode lasers with different devices and collimating optics,” Appl. Opt. 34, 4316-4325 (1995).
-
(1995)
Appl. Opt.
, vol.34
, pp. 4316-4325
-
-
Kane, D.M.1
Willis, A.P.2
-
4
-
-
0029273679
-
Measurement of the facet modal reflectivity spectrum in high quality semiconductor traveling wave amplifiers
-
S. A. Merrit, C. Dauga, S. Fox, I. F. Wu, and M. Dagenais, “Measurement of the facet modal reflectivity spectrum in high quality semiconductor traveling wave amplifiers,” J. Lightwave Technol. 13, 430-433 (1995).
-
(1995)
J. Lightwave Technol.
, vol.13
, pp. 430-433
-
-
Merrit, S.A.1
Dauga, C.2
Fox, S.3
Wu, I.F.4
Dagenais, M.5
-
5
-
-
84975605084
-
Modal reflectivity of untapered, tilted-facet, and antireflection-coated diode-laser amplifiers
-
B. Jaskorzyaska, J. Nilsson, and L. Thylen, “Modal reflectivity of untapered, tilted-facet, and antireflection-coated diode-laser amplifiers,” J. Opt. Soc. Am. B 8, 484-493 (1991).
-
(1991)
J. Opt. Soc. Am. B
, vol.8
, pp. 484-493
-
-
Jaskorzyaska, B.1
Nilsson, J.2
Thylen, L.3
-
6
-
-
0030172191
-
Semiconductor amplifiers and lasers with tapered gain regions
-
J. N. Walpole, “Semiconductor amplifiers and lasers with tapered gain regions,” Opt. Quantum Technol. 28, 623-645(1996).
-
(1996)
Opt. Quantum Technol.
, vol.28
, pp. 623-645
-
-
Walpole, J.N.1
-
7
-
-
0038689701
-
In situ reflectivity monitoring of antireflection coatings on semiconductor laser facets through facet loss induced forward voltage changes, Appl. Phys
-
J. Landreau and H. Nakajima, “In situ reflectivity monitoring of antireflection coatings on semiconductor laser facets through facet loss induced forward voltage changes,” Appl. Phys. Lett. 56, 2376-2378 (1990).
-
(1990)
Lett.
, vol.56
, pp. 2376-2378
-
-
Landreau, J.1
Nakajima, H.2
-
8
-
-
0026925883
-
Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometry
-
I. F. Wu, I. Riant, J. M. Verdiell, and M. Dagenais, “Real-time in situ monitoring of antireflection coatings for semiconductor laser amplifiers by ellipsometry,” IEEE Photon. Technol. Lett. 4, 991-993 (1992).
-
(1992)
IEEE Photon. Technol. Lett.
, vol.4
, pp. 991-993
-
-
Wu, I.F.1
Riant, I.2
Verdiell, J.M.3
Dagenais, M.4
-
9
-
-
33646261177
-
Multilayer antireflection coatings for the visible and near-infrared regions
-
H. Ganesha Shanbhogue, C. L. Nagendra, M. N. Annapurna, S. Ajith Kumar, and G. K. M. Thutupalli, “Multilayer antireflection coatings for the visible and near-infrared regions,”Appl. Opt. 36, 6339-6351 (1997).
-
(1997)
Appl. Opt.
, vol.36
, pp. 6339-6351
-
-
Ganesha Shanbhogue, H.1
Nagendra, C.L.2
Annapurna, M.N.3
Ajith Kumar, S.4
Thutupalli, G.K.M.5
-
10
-
-
0038013233
-
Experimental method for high-accuracy reflectivity-spectrum measurements
-
C. A. Berseth, A. Schonberg, O. Dehaese, K. Leifer, A. Rudra, and E. Kapon, “Experimental method for high-accuracy reflectivity-spectrum measurements,” Appl. Opt. 37, 6671-6676 (1998).
-
(1998)
Appl. Opt.
, vol.37
, pp. 6671-6676
-
-
Berseth, C.A.1
Schonberg, A.2
Dehaese, O.3
Leifer, K.4
Rudra, A.5
Kapon, E.6
-
11
-
-
0020205158
-
Theoretical performance of an antireflection coating for a diode laser amplifier
-
R. H. Clarke, “Theoretical performance of an antireflection coating for a diode laser amplifier,” Int. J. Electron. 53, 495-499 (1983).
-
(1983)
Int. J. Electron.
, vol.53
, pp. 495-499
-
-
Clarke, R.H.1
-
12
-
-
0020737765
-
Measurement of the modal reflectivity of an antireflection coated superluminescent diode
-
I. P. Kaminow, G. Eisenstein, and L. W. Stulz, “Measurement of the modal reflectivity of an antireflection coated superluminescent diode,” IEEE J. Quantum Electron. QE-19, 493-495(1983).
-
(1983)
IEEE J. Quantum Electron. QE-19
, pp. 493-495
-
-
Kaminow, I.P.1
Eisenstein, G.2
Stulz, L.W.3
-
13
-
-
0033097777
-
Temporal coherence behavior of a semiconductor laser under strong optical feedback
-
M. R. Daza, A. Tarun, K. Fujita, and C. Saloma, “Temporal coherence behavior of a semiconductor laser under strong optical feedback,” Opt. Commun. 161, 123-131 (1999).
-
(1999)
Opt. Commun.
, vol.161
, pp. 123-131
-
-
Daza, M.R.1
Tarun, A.2
Fujita, K.3
Saloma, C.4
-
14
-
-
0003743882
-
-
AIP Series in Theoretical and Applied Optics (American Institute of Physics, Woodbury, N.Y
-
G. P. Agrawal, ed., Semiconductor Lasers, Past, Present, and Future, AIP Series in Theoretical and Applied Optics (American Institute of Physics, Woodbury, N.Y., 1995).
-
(1995)
Semiconductor Lasers, Past, Present, and Future
-
-
Agrawal, G.P.1
-
15
-
-
0027629612
-
Accurate measurement of reflectivity over wave-length of a laser diode antireflection coating using an external cavity laser
-
L. F. Stokes, “Accurate measurement of reflectivity over wave-length of a laser diode antireflection coating using an external cavity laser,” J. Lightwave Technol. 11, 1162-1167 (1993).
-
(1993)
J. Lightwave Technol.
, vol.11
, pp. 1162-1167
-
-
Stokes, L.F.1
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