Hydrogen sensitivity of InP HEMTs with a thick Ti-layer in the Ti/Pt/Au gate stack

Conference Proceedings - International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 2003, Pages 223-226

  Mertens, S D ^a   Del Alamo, J A ^a   Suemitsu, T ^b   Enoki, T ^b  

^a MASSACHUSETTS INSTITUTE OF TECHNOLOGY   (United States)

^b NTT CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; DIFFUSION; GATES (TRANSISTOR); HYDROGENATION; PIEZOELECTRICITY; SEMICONDUCTING INDIUM PHOSPHIDE; SENSITIVITY ANALYSIS; SILICON WAFERS; DEGRADATION; ELECTRON SPECTROSCOPY; ELECTRONS; GOLD; HYDROGEN; INDIUM; INDIUM PHOSPHIDE; LOGIC GATES; MODFETS; SEMICONDUCTING INDIUM; SEMICONDUCTOR MATERIALS; SPECTROSCOPY; TITANIUM;

GOLD GATE STACK; HYDROGEN SENSITIVITY; INDIUM PHOSPHIDE TRANSISTORS; PLATINUM GATE STACK; THICK TITANIUM LAYER; TITANIUM GATE STACK;

HIGH ELECTRON MOBILITY TRANSISTORS;

DIFFUSION MECHANISMS; GATE RECESS; GATE STACKS; HEMTS; HYDROGEN DEGRADATION; HYDROGEN SENSITIVITY; II-IV SEMICONDUCTORS; THIN SHEET;

EID: 0038149432     PISSN: 10928669     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

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