Magnetic-field effects on shallow impurities in semiconductor GaAs-(Ga,Al)As quantum wells and superlattices within a fractional-dimensional space approach

Physica E: Low-Dimensional Systems and Nanostructures

Volumn 8, Issue 3, 2000, Pages 239-247

  Reyes Gomez E ^a   Perdomo Leiva, C A ^a   Oliveira, L E ^b   De Dios Leyva, M ^c  

^a INSTITUTO SUPERIOR POLITÉCNICO JOSÉ ANTONIO ECHEVERRÍA   (Cuba)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; HETEROJUNCTIONS; IMPURITIES; MAGNETIC FIELD EFFECTS; SEMICONDUCTOR QUANTUM WELLS; SUPERLATTICES; VARIATIONAL TECHNIQUES;

FRACTIONAL-DIMENSIONAL SPACE APPROACH;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0038034587     PISSN: 13869477     EISSN: None     Source Type: Journal    
DOI: 10.1016/S1386-9477(00)00154-5     Document Type: Article

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