Shallow impurities in semiconductor superlattices: A fractional-dimensional space approach

Journal of Applied Physics

Volumn 85, Issue 8 I, 1999, Pages 4045-4049

  Reyes Gomez E ^a   Oliveira, L E ^b   De Dios Leyva, M ^c  

^a INSTITUTO SUPERIOR POLITÉCNICO JOSÉ ANTONIO ECHEVERRÍA   (Cuba)

^b UNIVERSITY OF CAMPINAS   (Brazil)

^c UNIVERSITY OF HAVANA   (Cuba)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CRYSTAL IMPURITIES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DOPING; VARIATIONAL TECHNIQUES;

FRACTIONAL-DIMENSIONAL SPACE APPROACH;

SEMICONDUCTOR SUPERLATTICES;

EID: 0032614370     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.370309     Document Type: Article

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