Epitaxial growth and microstructure of cubic SiC films on Si substrates

Optical Materials

Volumn 23, Issue 1-2, 2003, Pages 49-54

  Jia, Hujun ^a   Yang, Yintang ^a   Chai, Changchun ^a   Li, Yuejin ^a   Zhu, Zuoyun ^a  

^a XIDIAN UNIVERSITY   (China)

Author keywords

3C SiC thin films; APCVD; Characterization

Indexed keywords

AUGER ELECTRON SPECTROSCOPY; COMPOSITION; EPITAXIAL GROWTH; MICROSTRUCTURE; SCANNING ELECTRON MICROSCOPY; SILICON CARBIDE; SUBSTRATES; THERMAL EFFECTS; THIN FILMS; X RAY DIFFRACTION ANALYSIS;

HETEROEPITAXIAL GROWTH;

SEMICONDUCTING FILMS;

EID: 0038010661     PISSN: 09253467     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-3467(03)00058-2     Document Type: Conference Paper

References (12)

1. Baliga B.J. Power Semiconductor Devices. 1996;pWS, Boston.
2. Andrew J.S., Li J.P. IEEE Trans. Electron Dev. 39:1992;64.
3. Susumu N., Sadao A. Jpn. J. Appl. Phys. 33:1994;1833.
4. Kong H.S., Palmour J.W.et al. Appl. Phys. Lett. 51(6):1987;442.
5. Scholz R.et al. Appl. Phys. Lett. 67(10):1995;1453.
6. Scholz R.et al. Appl. Phys. A. 64:1997;115.
7. Scholz R.et al. Appl. Phys. A. 66:1998;59.
8. Möller H.et al. Appl. Phys. A. 68:1999;461.
9. Addamiano A., Sprague J.A. Appl. Phys. Lett. 44(5):1984;525.
10. Yamaguchi Y., Nagasawa H.et al. Sens. Actuat. A. 54:1996;695.
11. Schor S.J., David G.et al. IEEE Trans. Electron Dev. 40(6):1993;1093.
12. Kingon A.I.et al. J. Am. Ceram. Soc. 66(8):1983;558.