A field effect transistor using highly nitrogen-doped CVD diamond for power device applications

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 483-489

  Yokoyama, Yoko ^a   Li, Xueqing ^b   Sheng, Kuang ^b   Mihaila, Andrei ^c   Traikovic, Tanija ^c   Udrea, Florin ^c   Amaratunga, G A J ^c   Okano, Ken ^a  

^a INTERNATIONAL CHRISTIAN UNIVERSITY   (Japan)

^b RUTGERS UNIVERSITY   (United States)

^c UNIVERSITY OF CAMBRIDGE   (United Kingdom)

Author keywords

Carrier density; Highly nitrogen doped CVD diamond; Power device; Schottky barrier

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; COMPUTER SIMULATION; DOPING (ADDITIVES); FIELD EFFECT TRANSISTORS; SCHOTTKY BARRIER DIODES;

POWER DEVICES;

DIAMONDS;

EID: 0038007854     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00402-1     Document Type: Conference Paper

References (10)

1. G. Amaratunga, F. Udrea, Selected publications of High Voltage Microelectronics Group, Department of Engineering, University of Cambridge, 2001.
2. L.S. Pan, D.R. Kania, Diamond: Electronic Properties and Applications, Kluwer Academic Publishers, Dordrecht, 1995.
3. Itoh H., Kawarada K. Jpn. J. Appl. Phys. 1. 34:1995;4677.
4. Okano K., Koizumi S., Silva S.R.P., Amaratunga G.A.J. Nature. 381:1996;140.
5. Kajihara S.A., Antonelli A., Bernholc J. Phys. Rev. Lett. 66:1991;2010.
6. Geis M.W., Twichell J.C., Lyszczarz T.M. J. Vac. Sci. Tech. B14:1996;2060.
7. Tachibana T., Williams B.E., Glass J.T. Phys. Rev. B45:1992;11975.
8. Teraji T., Koizumi S., Kanda H. Appl. Phys. Lett. 76:2000;1303.
9. Integrated Systems Engineering AG, ISE TCAD Manuals 8.0, ISE Integrated Systems Engineering AG, 2002.
10. L.S. Pan, S. Han, D.R. Kania, K. Okano, Diamond Films and Technol. 2 (2-3) (1992).