Room-temperature operation of ZnSe-active-layer and ZnCdSe-active-layer laser diodes

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 35, Issue 2 SUPPL. B, 1996, Pages 1410-1414

  Okuyama, Hiroyuki ^a   Nakayama, Norikazu ^a   Itoh, Satoshi ^a   Ikeda, Masao ^a   Ishibashi, Akira ^a  

^a SONY CORPORATION   (Japan)

Author keywords

Band filling; Band gap shrinkage (band gap renormalization); Double heterostructure (DH); Electron hole plasma (EHP); Exciton; Laser diode (LD); ZnMgSSe; ZnSe

Indexed keywords

BAND STRUCTURE; CALCULATIONS; CARRIER CONCENTRATION; ELECTRON EMISSION; EXCITONS; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; PLASMAS; SEMICONDUCTING ZINC COMPOUNDS; SEMICONDUCTOR GROWTH; SEMICONDUCTOR QUANTUM WELLS;

BAND FILLING; BAND GAP RENORMALIZATION; BAND GAP SHRINKAGE; ELECTRON HOLE PLASMA; EMISSION ENERGY SHIFT; LASING WAVELENGTH; ZINC SELENIDE;

SEMICONDUCTOR LASERS;

EID: 0030078912     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.35.1410     Document Type: Article

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