Picosecond pulse generation with 1.5 μm passively modelocked surface-emitting semiconductor laser

Electronics Letters

Volumn 39, Issue 11, 2003, Pages 846-847

  Hoogland, S ^a   Garnache, A ^b   Sagnes, I ^c   Paldus, B ^d   Weingarten, K J ^e   Grange, R ^f   Haiml, M ^f   Paschotta, R ^f   Keller, U ^f   Tropper, A C ^a  

^a UNIVERSITY OF SOUTHAMPTON   (United Kingdom)

^b UNIV MONTPELLIER   (France)

^c UNIV PARIS SUD   (France)

^d PICARRO INC   (United States)

^e GigaTera Inc   (Switzerland)

^f ETH ZURICH   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

BANDWIDTH; LASER MODE LOCKING; OPTICALLY PUMPED LASERS; PULSE GENERATORS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM WELLS;

CAVITY SURFACES;

SEMICONDUCTOR LASERS;

EID: 0038001681     PISSN: 00135194     EISSN: None     Source Type: Journal    
DOI: 10.1049/el:20030576     Document Type: Article

References (9)

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3. LORENSER, D., ASCHWANDEN, A., HARING, R., PASCHOTTA, R., GINI, E., and KELLER, U.: 'Mode-locked high-power surface-emitting semiconductor laser'. Presented at Conference for Lasers and Electro-Optics, Baltimore, 2003
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