Compositional changes in Erbium-implanted GaN films due to annealing

Journal of Electronic Materials

Volumn 32, Issue 5, 2003, Pages 382-387

  Zavada, J M ^a   Wilson, R G ^d   Hommerich U ^b   Thaik, M ^b   Seo, J T ^b   Ellis, C J ^c   Lin, J Y ^c   Jiang, H X ^c  

^a U S ARMY RESEARCH OFFICE   (United States)

^b HAMPTON UNIVERSITY   (United States)

^c KANSAS STATE UNIVERSITY   (United States)

^d NONE

Author keywords

Annealing; Erbium; GaN; Implantation; Photoluminescence; SIMS

Indexed keywords

ANNEALING; ERBIUM; ION IMPLANTATION; METALLORGANIC CHEMICAL VAPOR DEPOSITION; PHOTOLUMINESCENCE; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTING GALLIUM COMPOUNDS;

BANDGAP;

SEMICONDUCTING FILMS;

EID: 0037987821     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-003-0162-7     Document Type: Conference Paper

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