Impurity related interface effects in GSMBE grown InP

1993 IEEE 5th International Conference on Indium Phosphide and Related Materials

Volumn , Issue , 1993, Pages 107-110

  Rakennus, K ^a   Likonen, J ^a   Nappi, J ^a   Tappura, K ^a   Asonen, H ^a   Pessa, M ^a  

^a TAMPERE UNIVERSITY OF TECHNOLOGY   (Finland)

Author keywords

[No Author keywords available]

Indexed keywords

EPITAXIAL GROWTH; HETEROJUNCTIONS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTOR DEVICES;

GAS SOURCE MOLECULAR BEAM EPITAXY; HALL MOBILITIES; INTERFACE EFFECTS;

SEMICONDUCTING INDIUM PHOSPHIDE;

EID: 0027149786     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (5)