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Volumn 4851, Issue 2, 2002, Pages 842-848

Proton induced leakage current in CCDs

Author keywords

Bright pixel; CCD; Damage; Leakage current; Proton; Random telegraph signal

Indexed keywords

FREQUENCIES; IONIZATION; IRRADIATION; LEAKAGE CURRENTS; PROTONS; SIGNAL GENERATORS; TELEGRAPH;

EID: 0037957273     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.461331     Document Type: Conference Paper
Times cited : (14)

References (13)
  • 4
    • 0037149906 scopus 로고    scopus 로고
    • The effect of proton damage on the X-ray spectral response of MOS CCDs for the Swift X-ray telescope
    • R. M. Ambrosi, A. D. T. Short, A. F. Abbey, A. A. Wells, D. R. Smith, "The effect of proton damage on the X-ray spectral response of MOS CCDs for the Swift X-ray telescope", Nuc. Inst. and Meth. A, vol. 482, pp. 644-652, 2002.
    • (2002) Nuc. Inst. and Meth. A , vol.482 , pp. 644-652
    • Ambrosi, R.M.1    Short, A.D.T.2    Abbey, A.F.3    Wells, A.A.4    Smith, D.R.5
  • 7
    • 0027841912 scopus 로고
    • Random telegraph signals from proton-irradiated CCDs
    • I. H. Hopkins, G. R. Hopkinson, "Random telegraph signals from proton-irradiated CCDs", IEEE Trans. on Nuc. Sci., vol. 40, no. 6, pp. 1567-1574, 1993.
    • (1993) IEEE Trans. on Nuc. Sci. , vol.40 , Issue.6 , pp. 1567-1574
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 8
    • 0029492479 scopus 로고
    • Further measurements of random telegraph signals in proton irradiated CCDs
    • I. H. Hopkins, G. R. Hopkinson, "Further measurements of random telegraph signals in proton irradiated CCDs", IEEE Trans. Nuc. Sci., vol. 42, no. 6, pp. 2074-2081, 1995.
    • (1995) IEEE Trans. Nuc. Sci. , vol.42 , Issue.6 , pp. 2074-2081
    • Hopkins, I.H.1    Hopkinson, G.R.2
  • 11
    • 0024304329 scopus 로고
    • Introduction to defect bistability
    • A. Chantre, "Introduction to defect bistability", Appl. Phys., A48, pp. 3-9, 1989.
    • (1989) Appl. Phys. , vol.A48 , pp. 3-9
    • Chantre, A.1
  • 12
    • 0026237326 scopus 로고
    • Metastable defects in silicon: Hints for DX and EL2
    • G. D. Watkins, "Metastable defects in silicon: hints for DX and EL2", Semicond. Sci. Technol, vol. 6, pp. B111-B120, 1990.
    • (1990) Semicond. Sci. Technol. , vol.6
    • Watkins, G.D.1
  • 13
    • 0024915865 scopus 로고
    • Enhanced displacement damage effectiveness in irradiated silicon devices
    • J. R. Srour, R. A. Hartmann, "Enhanced displacement damage effectiveness in irradiated silicon devices", IEEE Trans. on Nuc. Sci, vol. 36, no. 6, pp. 1825-1830, 1989.
    • (1989) IEEE Trans. on Nuc. Sci. , vol.36 , Issue.6 , pp. 1825-1830
    • Srour, J.R.1    Hartmann, R.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.