Polycrystalline silicon thin films grown by dc arc discharge ion plating

Thin Solid Films

Volumn 335, Issue 1-2, 1998, Pages 127-129

  Yoshida, Makoto ^a   Saida, Takahiro ^a   Okada, Satoshi ^a   Akamatsu, Masahiro ^a   Kondo, Kenichi ^a  

^a STANLEY ELECTRIC CO LTD   (Japan)

Author keywords

Crystallization; Hydrogen; Ion plating; Silicon

Indexed keywords

COMPOSITION EFFECTS; CRYSTALLIZATION; DEPOSITION; ELECTROPLATING; FILM GROWTH; PLASMA DENSITY; POLYCRYSTALLINE MATERIALS; PRESSURE EFFECTS; RAMAN SCATTERING; SILICON; VOLUME FRACTION;

ARC DISCHARGE ION PLATING;

THIN FILMS;

EID: 0032308315     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(98)00971-7     Document Type: Article

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