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Volumn 34, Issue 5-8, 2003, Pages 459-462

Lateral confinement of carriers in ultrathin semiconductor quantum wells

Author keywords

Electronic structure; Lateral confinement; Quantum well

Indexed keywords

ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; ENERGY GAP; MONOLAYERS; ULTRATHIN FILMS;

EID: 0037905525     PISSN: 00262692     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0026-2692(03)00073-9     Document Type: Conference Paper
Times cited : (2)

References (7)
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  • 2
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    • Dargam, T.G.1    Capaz, R.B.2    Koiller, B.3
  • 3
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    • Excitons in ultrathin InAs/InP quantum wells: Interplay between extended and localized states
    • Paki P., Leonelli R., Isnard L., Masut R.A. Excitons in ultrathin InAs/InP quantum wells: interplay between extended and localized states. J. Vac. Sci. Technol., A. 18:(3):2000;956-959.
    • (2000) J. Vac. Sci. Technol., A , vol.18 , Issue.3 , pp. 956-959
    • Paki, P.1    Leonelli, R.2    Isnard, L.3    Masut, R.A.4
  • 4
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    • Highly convergent schemes for the calculation of bulk and surface Green functions
    • López-Sancho M.P., López-Sancho J.M., Rubio J. Highly convergent schemes for the calculation of bulk and surface Green functions. J. Phys. F: Met. Phys. 15:(4):1985;851-858.
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    • Priester, C.1    Allan, G.2    Lannoo, M.3
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    • Theory of carriers bound to In isoelectronic δ-doping layers in GaAs
    • Di Ventra M., Mäder K.A. Theory of carriers bound to In isoelectronic δ-doping layers in GaAs. Phys. Rev. B. 55:(19):1997;13148-13154.
    • (1997) Phys. Rev. B , vol.55 , Issue.19 , pp. 13148-13154
    • Di Ventra, M.1    Mäder, K.A.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.