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Physical Review B - Condensed Matter and Materials Physics

Volumn 64, Issue 24, 2001, Pages 2453271-2453276

Interface modulation and quantum well to quantum wire crossover in semiconductor heterostructures

(3) Dargam, T G a Capaz, R B b Koiller, Belita b

a FLUMINENSE FEDERAL UNIVERSITY (Brazil)

b FEDERAL UNIVERSITY OF RIO DE JANEIRO (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

ALUMINUM DERIVATIVE; ARSENIC DERIVATIVE; GALLIUM;

AMPLITUDE MODULATION; ARTICLE; BINDING KINETICS; MODULATION; OPTICAL DENSITY; OSCILLATION; QUANTUM MECHANICS; SEMICONDUCTOR; SPECTRAL SENSITIVITY;

EID: 0035894360 PISSN: 01631829 EISSN: None Source Type: Journal
DOI: 10.1103/physrevb.64.245327 Document Type: Article

Times cited : (4)

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- note

* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.