High performance organic field effect transistor with a novel top-and-bottom contact (TBC) structure

Materials Research Society Symposium - Proceedings

Volumn 736, Issue , 2002, Pages 213-218

  Yoshida, Manabu ^a   Uemura, Sei ^a   Hoshino, Satoshi ^a   Kodzasa, Takehito ^a   Haraichi, Satoshi ^a   Kamata, Toshihide ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC POTENTIAL; ELECTROCHEMICAL ELECTRODES; FIELD EFFECT TRANSISTORS; INTERFACES (MATERIALS); PHOTOLITHOGRAPHY;

SCHOTTKY JUNCTION;

SEMICONDUCTING ORGANIC COMPOUNDS;

EID: 0037866937     PISSN: 02729172     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (6)

1. G H. Gelinck, T. C. T. Geuns, and D. M. de Leeuw, Appl. Phys. Lett., 77, 1487 (2000).
2. J. A. Rogers, Z. Bao, A. Makhija, and P. Braun, Adv. Mater., 11, 741 (1999).
3. H. Sirringhaus, T. Kawase, R. H. Friend, T. Shimoda, M. Inbasekaran, W. Wu, and E. P. Woo, Science, 290, 2123 (2000).
4. Y. Y. Lin, D. J. Gundlach, S. F. Nelson, and T. N. Jacson, IEEE Electr. Dev. Lett., 18, 87 (1997)
5. C. D. Dimitrakopoulos, and P. R. L. Malenfant, Adv. Mater., 14, 99 (2002)
6. T. D. Anthopoulos, and T. S. Shafai, phys. stat. sol. (a), 186, 89-97 (2001)