Investigation of 4H-SiC Schottky diodes by ion and X-ray micro beam induced charge collection techniques

Diamond and Related Materials

Volumn 12, Issue 3-7, 2003, Pages 667-671

  Manfredotti, C ^a   Vittone, E ^a   Paolini, C ^a   Olivero, P ^a   Lo Giudice, A ^a   Jaksic, M ^b   Barrett, R ^c  

^a UNIVERSITY OF TURIN   (Italy)

^b RUDER BO KOVI INSTITUTE   (Croatia)

^c EUROPEAN SYNCHROTRON RADIATION FACILITY   (France)

Author keywords

Detectors; Electrical properties; Electrical properties characterisation; Silicon carbide

Indexed keywords

IONIZATION; OHMIC CONTACTS; PHOTOCURRENTS; SEMICONDUCTING SILICON COMPOUNDS; TRANSPORT PROPERTIES; X RAYS;

X-RAY MICRO BEAMS;

SCHOTTKY BARRIER DIODES;

DIAMOND;

EID: 0037846428     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0925-9635(02)00387-4     Document Type: Article

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