Design consideration of emitter-base junction structure for InGaP/GaAs heterojunction bipolar transistors

Solid-State Electronics

Volumn 43, Issue 2, 1999, Pages 297-304

  Cheng, Shiou Ying ^a   Chang, Wen Lung ^a   Pan, Hsi Jen ^a   Shie, Yung Hsin ^a   Liu, Wen Chau ^a  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

INTERFACES (MATERIALS); SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS;

EMITTER-BASED JUNCTION STRUCTURE; HETEROINTERFACES;

HETEROJUNCTION BIPOLAR TRANSISTORS;

EID: 0033079747     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0038-1101(98)00268-8     Document Type: Article

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