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Surface and Interface Analysis

Volumn 35, Issue 6, 2003, Pages 548-551

Calculated bulk vacancy formation energy (Ev) for a Schottky defect in Al single crystals

(1) Terblans, J J a

a UNIVERSITY OF THE FREE STATE (South Africa)

Author keywords

Al; Bulk diffusion; Diffusion; Empirical many body potential; Self diffusion; Surface segregation; Sutton Chen potential; Vacancy formation energy

Indexed keywords

ACTIVATION ENERGY; DIFFUSION; NUMERICAL METHODS; SINGLE CRYSTALS; SURFACE TREATMENT;

BULK DIFFUSION; SCHOTTKY DEFECT; SURFACE SEGREGATION;

ALUMINUM;

EID: 0037789559 PISSN: 01422421 EISSN: None Source Type: Journal
DOI: 10.1002/sia.1560 Document Type: Article

Times cited : (10)

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