Calculating the bulk vacancy formation energy (Ev) for a Schottky defect in a perfect Cu(111), Cu(100) and a Cu(110) single crystal

Surface and Interface Analysis

Volumn 33, Issue 9, 2002, Pages 767-770

  Terblans, J J ^a  

^a UNIVERSITY OF THE FREE STATE   (South Africa)

Author keywords

Bulk diffusion; Cu; Diffusion; Empirical many body potential; Sb; Surface segregation; Sutton Chen potential; Vacancy formation energy

Indexed keywords

ACTIVATION ENERGY; ATOMS; CALCULATIONS; CRYSTAL DEFECTS; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DIFFUSION IN SOLIDS; ELECTRON ENERGY LEVELS; PROBABILITY; SINGLE CRYSTALS; SURFACE STRUCTURE;

BULK DIFFUSION; SURFACE SEGREGATION; SUTTON-CHEN POTENTIAL; VACANCY FORMATION ENERGY;

COPPER;

EID: 0036747369     PISSN: 01422421     EISSN: None     Source Type: Journal    
DOI: 10.1002/sia.1451     Document Type: Article

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