A quadrupole ion trap as low-energy cluster ion beam source

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 42, Issue 2 A, 2003, Pages 707-712

  Uchida, Noriyuki ^a   Bolotov, Leonid ^a   Kanayama, Toshihiko ^a  

^a NATIONAL INSTITUTE OF ADVANCED INDUSTRIAL SCIENCE AND TECHNOLOGY AIST   (Japan)

Author keywords

Cluster ion beam; Hydrogenated silicon cluster; Ion trap; Ion beam deposition; Mass selected cluster

Indexed keywords

CALCULATIONS; DEPOSITION; ELECTRON ENERGY LEVELS; HYDROGENATION; ION BEAMS; SCANNING TUNNELING MICROSCOPY; SILICON;

HYDROGENATED SILICON CLUSTER; ION-BEAM DEPOSITION; MASS-SELECTED CLUSTER; QUADRUPOLE ION TRAP;

ION SOURCES;

EID: 0037744557     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.42.707     Document Type: Article

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