Growth of hydrogenated silicon cluster ions using an ion trap

Chemical Physics Letters

Volumn 328, Issue 4-6, 2000, Pages 409-414

  Hiura, Hidefumi ^a   Kanayama, Toshihiko ^b  

^a JT RES CENTER FOR ATOM TECHNOLOGY   (Japan)

^b NATL INST FOR ADV INTERDISC RES   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0001714997     PISSN: 00092614     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0009-2614(00)00941-6     Document Type: Article

References (28)

1. P. Jena, S.N. Khanna, B.K. Rao, in: K. Sattler (Ed.), Cluster Assembled Materials, vol. 232, Material Science Forum, Trans Tech Publications, Zuerich-Uetikon, 1996, p. 1.
2. Burkart S., Blessing N., Klipp B., Müller J., Ganteför G., Seifert G. Chem. Phys. Lett. 301:1999;546.
3. M.S. Dresselhaus, G. Dresselhaus, P.C. Eklund (Eds), Science of Fullerenes and Carbon Nanotubes, Academic Press, San Diego, 1996.
4. Reents W.D. Jr., Mandich M.L. J. Chem. Phys. 96(6):1992;4429. and references therein.
5. Raghavachari K. J. Chem. Phys. 96(6):1992;4440. and references therein.
6. Murakami H., Kanayama T. Appl. Phys. Lett. 67(16):1995;2341.
7. Miyazaki T., Uda T., Stich I., Terakura K. Chem. Phys. Lett. 261:1996;346.
8. Miyazaki T., Uda T., Stich I., Terakura K. Chem. Phys. Lett. 284:1998;12.
9. Watanabe M.O., Miyazaki T., Kanayama T. Phys. Rev. Lett. 81(24):1998;5362.
10. Meleshko V., Morokov Yu., Scweigert V. Chem. Phys. Lett. 300:1999;118.
11. Raghavachari K., Logovinsky V. Phys. Rev. Lett. 55(26):1985;2853.
12. Saito S., Ohnishi S., Satoko C., Sugano S. J. Phys. Soc. Jpn. 55(6):1986;1791.
13. Elkind J.L., Alford J.M., Weiss F.D., Laaksonen R.T., Smalley R.E. J. Chem. Phys. 87(4):1987;2397.
14. Kaxiras E. Phys. Rev. Lett. 64(5):1990;551.
15. Jarrold M.F. Science. 252:1991;1085.
16. Honea E.C., Ogura A., Murray C.A., Raghavachari K., Sprenger W.O., Jarrold M.F., Brown W.L. Nature. 366:1993;42-44.
17. Ho K.-M., Shvartsburg A.A., Pan B., Lu Z.-Y., Wang C.-Z., Wacker J.G., Fye J.L., Jarrold M.F. Nature. 392:1998;582. and references therein.
18. Howling A.A., Sansonnens L., Dorier J.-L., Hollenstein Ch. J. Appl. Phys. 75:1994;1340. and references therein.
19. Mandich M.L., Reents W.D. Jr., Jarrold M.F. J. Chem. Phys. 88:1988;1703.
20. Mandich M.L., Reents W.D. Jr., Kolenbrander K.D. J. Chem. Phys. 92:1990;437.
21. Mandich M.L., Reents W.D. Jr. J. Chem. Phys. 95:1991;7360.
22. Reents W.D. Jr., Mandich M.L. J. Chem. Phys. 96:1992;4429.
23. Raghavachari K. J. Chem. Phys. 88:1988;1688.
24. Raghavachari K. J. Chem. Phys. 92:1990;452.
25. Raghavachari K. J. Chem. Phys. 95:1991;7373.
26. Raghavachari K. J. Chem. Phys. 96:1992;4440.
27. Kanayama T. Jpn. J. Appl. Phys. 33:1994;L1792.
28. Kanayama T., Murakami H. J. Vac. Sci. Technol. B. 15(6):1997;2882.