Etching characteristics of SiO2 irradiated with focused ion beam

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 206, Issue , 2003, Pages 478-481

  Sadoh, T ^a   Eguchi, H ^a   Kenjo, A ^a   Miyao, M ^a  

^a KYUSHU UNIVERSITY   (Japan)

Author keywords

Etching; Focused ion beam; Nano fabrication; SiO2; ULSI

Indexed keywords

ETCHING; ION BEAMS; ION IMPLANTATION; NANOSTRUCTURED MATERIALS; SILICA; ULSI CIRCUITS;

FOCUSED ION BEAMS (FIB);

ION BOMBARDMENT;

EID: 0037737599     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0168-583X(03)00800-0     Document Type: Conference Paper

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