Dependence on Ge doping of specific volume change in silica induced by electron-beam irradiation

Journal of Non-Crystalline Solids

Volumn 322, Issue 1-3, 2003, Pages 284-288

  Jacqueline, A S ^a   Garcia Blanco, S ^b   Poumellec, B ^a   Aitchison, J S ^c  

^a UNIVERSITÉ PARIS SUD   (France)

^b UNIVERSITY OF GLASGOW   (United Kingdom)

^c UNIVERSITY OF TORONTO   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITION; DENSIFICATION; DOPING (ADDITIVES); ELECTRON IRRADIATION; PHOTOSENSITIVITY; REFRACTIVE INDEX; SURFACE TOPOGRAPHY; ULTRAVIOLET RADIATION;

MODIFIED CHEMICAL VAPOR DEPOSITION (MCVD);

FUSED SILICA;

EID: 0037716493     PISSN: 00223093     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0022-3093(03)00216-3     Document Type: Conference Paper

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