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Volumn 2000-January, Issue , 2000, Pages 1028-1031

Advances in low-Bandgap InAsSbP/InAs and GaInAsSb/GaSb thermophotovoltaics

Author keywords

[No Author keywords available]

Indexed keywords

CELL ARRAY; CELL FABRICATIONS; EPITAXIAL DEVICES; HIGH VOLTAGE; LOW BANDGAP; MINIMODULES; THERMOPHOTOVOLTAIC DEVICES; THERMOPHOTOVOLTAICS;

EID: 0037713790     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2000.916061     Document Type: Conference Paper
Times cited : (5)

References (16)
  • 1
    • 0006168063 scopus 로고
    • The first NREL conf. on thermophotovoltaic generation of electricity
    • AIP, Woodbury, New York
    • T.J. COUTTS and J.P. BENNER, The First NREL Conf. on Thermophotovoltaic Generation of Electricity, American Inst. Physics Conference Proc. 321 (AIP, Woodbury, New York, 1995).
    • (1995) American Inst. Physics Conference Proc. , vol.321
    • Coutts, T.J.1    Benner, J.P.2
  • 2
    • 0343188860 scopus 로고    scopus 로고
    • The second NREL conf. on thermophotovoltaic generation of electricity
    • AIP, Woodbury, New York
    • J.P. BENNER, T.J. COUTTS, and D.S. GINLEY, The Second NREL Conf. on Thermophotovoltaic Generation of Electricity, American Inst. Physics Conference Proc. 358 (AIP, Woodbury, New York, 1996).
    • (1996) American Inst. Physics Conference Proc. , vol.358
    • Benner, J.P.1    Coutts, T.J.2    Ginley, D.S.3
  • 6
    • 0033328651 scopus 로고    scopus 로고
    • Thermophotovoltaic and photovoltaic conversion at high-flux densities
    • T.J. COUTTS and J.S. WARD, "Thermophotovoltaic and Photovoltaic Conversion at High-Flux Densities" IEEE Trans. Electron Devices 46, 10 (1999) 2145.
    • (1999) IEEE Trans. Electron Devices , vol.46 , Issue.10 , pp. 2145
    • Coutts, T.J.1    Ward, J.S.2
  • 11
    • 84949547640 scopus 로고
    • Preparation of in-as-sb-P solid solutions isoperiodic to InAs and GaSb near the boundary of the immiscibility region
    • A.M. LITVAK, K.D. MOISEEV, M.V. STEPANOV, V.V. SHERSTNEV, and Y.P. YAKOVLEV, "Preparation of In-As-Sb-P Solid Solutions Isoperiodic to InAs and GaSb Near the Boundary of the Immiscibility Region" Russian J. Applied Chemistry 67, 12 (1994) 1708.
    • (1994) Russian J. Applied Chemistry , vol.67 , Issue.12 , pp. 1708
    • Litvak, A.M.1    Moiseev, K.D.2    Stepanov, M.V.3    Sherstnev, V.V.4    Yakovlev, Y.P.5
  • 14
    • 0032074414 scopus 로고    scopus 로고
    • Liquid-phase epitaxial growth of InAsSbP/InAs heterostructure
    • W. YONGZHEN, J. CHANGCHUN, and L. GUIJIN, "Liquid-Phase Epitaxial Growth of InAsSbP/InAs Heterostructure" J. Crystal Growth 187 (1998) 194-196.
    • (1998) J. Crystal Growth , vol.187 , pp. 194-196
    • Yongzhen, W.1    Changchun, J.2    Guijin, L.3
  • 15
    • 0034204975 scopus 로고    scopus 로고
    • Investigation of rare earth gettering for the fabrication of improved mid-infrared leds
    • A. KRIER, H.H. GAO, and V.V. SHERSTNEV, "Investigation of Rare Earth Gettering for the Fabrication of Improved Mid-Infrared Leds" IEE Proc. Optoelectronics 147, 3 (2000) 217-221.
    • (2000) IEE Proc. Optoelectronics , vol.147 , Issue.3 , pp. 217-221
    • Krier, A.1    Gao, H.H.2    Sherstnev, V.V.3


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.