Transient ionizing radiation effects in devices and circuits

IEEE Transactions on Nuclear Science

Volumn 50 III, Issue 3, 2003, Pages 565-582

  Alexander, David R ^a  

^a VANDERBILT UNIVERSITY   (United States)

Author keywords

Diodes; Ionizing radiation; Microcircuits; Photocurrent; Silicon; Transistors

Indexed keywords

INTEGRATED CIRCUITS; IONIZING RADIATION; PHOTOCURRENTS; SEMICONDUCTING SILICON; SEMICONDUCTOR DIODES; TRANSISTORS;

MICROCIRCUITS; TRANSIENT IONIZING RADIATION EFFECTS;

RADIATION EFFECTS;

EID: 0037706968     PISSN: 00189499     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNS.2003.813136     Document Type: Article

References (160)

1. S. C. Rogers, private communication, Jan. 2003.
2. W. L. Brown, "Transient effects of high-intensity radiation in P-N junctions," in Appendix D, Fifth Triannual Tech. Note NEEP, Nov. 1960.
3. R. Beaufoy and J. J. Sparks, "The junction transistor as a charge-controlled device," AT&T J., vol. 13, p. 310, 1957.
4. H. K. Gummel and H. C. Poon, "An integral charge control model of bipolar transistors," Bell Syst. Tech. J., p. 827, May 1970.
5. J. L. Wirth and S. C. Rogers, "The transient response of transistors and diodes to ionizing radiation," IEEE Trans. Nucl. Sci., p. 24, Nov. 1964.
6. F. N. Coppage, private communication, Jan. 2003.
7. D. H. Habing and J. L. Wirth, "Anomalous photocurrent generation in transistor structures," IEEE Trans. Nucl. Sci., vol. NS-13, p. 95, Dec. 1966.
8. C. W. Gwyn, D. L. Scharfetter, and J. L. Wirth, "The analysis of radiation effects in semiconductor junction devices," IEEE Trans. Nucl. Sci., vol. NS-14, p. 153, Dec. 1967.
9. C. W. Gwyn, "An analysis of ionizing radiation effects in four-layer semiconductor devices," IEEE Trans. Nucl. Sci., vol. NS-16, p. 104, Dec. 1969.
10. R. S. Caldwell, D. S. Gage, and G. H. Hanson, "The transient behavior of transistors due to ionizing radiation pulses," IEEE Trans. Commun. Electron., no. 64, Jan. 1963.
11. C. Rosenberg, D. S. Gage, R. S. Caldwell, and G. H. Hanson, "Charge-control equivalent circuit for predicting transient radiation effects in transistors," IEEE Trans. Nucl. Sci., vol. NS-10, p. 149, Nov. 1963.
12. The Boeing Company, "Analytical methods and fundamental parameters for predicting responses of electronic circuits to nuclear radiation with application to hardened circuit design,", AFWL TR-65-105, July 1965.
13. W. C. Bowman, R. S. Caldwell, A. H. Johnston, and K. E. Kells, "Transient radiation response mechanisms in microelectronics," IEEE Trans. Nucl. Sci., vol. NS-13, p. 309, Dec. 1966.
14. D. C. Sowlin, K. E. Kells, and L. T. Hunter, "Microcircuit hardening study," IEEE Trans. Nucl. Sci., vol. NS-13, p. 316, Dec. 1966.
15. J. P. Raymond, private communication, Jan. 2003.
16. J. Raymond, E. Steele, and W. Chang, "Radiation effects in metal-oxide-semiconductor transistors," IEEE Trans. Nucl. Sci., vol. NS-12, p. 457, Feb. 1965.
17. J. P. Raymond and J. Willis, "Generalized model analysis of ionizing radiation effects in semiconductor devices," IEEE Trans. Nucl. Sci., vol. NS-12, p. 55, Oct. 1965.
18. G. C. Messenger, "Radiation effects on microcircuits," IEEE Trans. Nucl. Sci., vol. NS-13, p. 141, Dec. 1966.
19. W. W. Chang and J. P. Raymond, "Prediction of integrated flip flop circuit radiation vulnerability," IEEE Trans. Nucl. Sci., vol. NS-14, p. 223, Dec. 1967.
20. J. P. Raymond, W. W. Chang, and R. E. Budris, "Lumped-model analysis of microcircuit vulnerability," IEEE Trans. Nucl. Sci., vol. NS-15, p. 272, Dec. 1968.
21. E. A. Carr and K. P. Walker, "Simplified engineering techniques for predicting diode tree responses," IEEE Trans. Nucl. Sci., vol. NS-13, p. 105, Dec. 1966.
22. C. W. Perkins and R. W. Marshall, "Radiation effects on monolithic silicon integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-13, p. 300, Dec. 1966.
23. D. M. Long and H. L. Flescher, "Transient response of MOS transistors and integrated circuits to ionizing radiation," IEEE Trans. Nucl. Sci., vol. NS-13, p. 295, Dec. 1966.
24. D. M. Long, "A radiation effects large signal equivalent circuit for MOS transistors," IEEE Trans. Nucl. Sci., vol. NS-14, p. 210, Dec. 1967.
25. V. A. J. van Lint, J. H. Alexander, D. K. Nichols, and P. R. Ward, "Computerized model for response of transistors to a pulse of ionizing radiation," IEEE Trans. Nucl. Sci., vol. NS-14, p. 170, Dec. 1967.
26. F. Larin, Radiation Effects in Semiconductor Devices. New York: Wiley, 1968, p. 15.
27. B. Sigfirdsson and G. Leman, "Some aspects on the theory of transient radiation induced diffusion currents in semiconductor diodes," IEEE Trans. Nucl. Sci., vol. NS-14, p. 179, Dec. 1967.
28. S. M. Sze, Physics of Semiconductor Devices. New York: Wiley-Inter-science, 1969, pp. 84-96.
29. J. K. Notthoff, "Techniques for estimating primary photocurrents in silicon bipolar transistors," IEEE Trans. Nucl. Sci., vol. NS-16, p. 138, Dec. 1969.
30. T. F. Wunsch and C. L. Axness, "Modeling the time-dependent transient radiation response of semiconductor junctions," IEEE Trans. Nucl. Sci., vol. NS-39, p. 2158, Dec. 1992.
31. C. L. Axness and T. F. Wunsch, "Analytic photo-collection modeling under low-injection conditions," SAND92-1652, 1992.
32. T. A. Fjeldly et al., "Modeling of high-dose-rate transient ionizing radiation effects in bipolar devices," IEEE Trans. Nucl. Sci., vol. 48, p. 1721, Dec. 2001.
33. A. N. Ishaque et al., "Photocurrent modeling at high dose rates," IEEE Trans. Nucl. Sci., vol. NS-36, p. 2092, Dec. 1989.
34. E. W. Enlow and D. R. Alexander, "Photocurrent modeling of modern PN junctions," IEEE Trans. Nucl. Sci., vol. NS-35, p. 1467, Dec. 1988.
35. M. R. Pinto et al., "PISCES-II: Poisson and continuity equation solver," Stanford Electronics Lab., Stanford, CA, 1984.
36. D. M. Long et al., "Transient response model for epitaxial transistors," IEEE Trans. Nucl. Sci., vol. NS-30, p. 4131, Dec. 1983.
37. A. H. Johnston, "Geometrical considerations in the transient ionization testing of digital logic circuits," IEEE Trans. Nucl. Sci., p. 1816, Dec. 1982.
38. A. N. Ishaque et al., "An extended ambipolar model: Formulation, analytical investigations, and application to photocurrent modeling," J. Appl. Phys., vol. 1, no. 69, p. 307, Jan. 1991.
39. I. S. Gradsthyn and I. M. Ruzhik, Table of Integrals, Series and Products, 2nd ed. New York: Academic, 1980.
40. L. W. Nagel, "SPICE2: A computer program to simulate semiconductor circuits," Univ. California, Berkeley, Electronics Res. Lab. Rep. ERLM520, 1975.
41. ATLAS is a registered trademark of SILVACO, Inc.
42. DESSIS is a registered trademark of ISE, Inc.
43. TAURUS is a registered trade mark of Synopsys, Inc.
44. J. J. Ebers and J. L. Moll, "Large signal behavior of junction transistors," Proc. IRE, vol. 42, p. 1761, Dec. 1954.
45. J. G. Linvill and J. F. Gobbons, Transistors and Active Circuits. New York: Mc Graw-Hill, 1960.
46. H. W. Mathers et al., "Automatic digital computer program for determining responses of electronic circuits to transient nuclear radiation (SCEPTRE),", AFWL-TR-66-126, 1966.
47. E. D. Johnson et al., "Transient radiation analyzes by computer program (TRAC), Volumes 1 and 2,", Autonetics Tech. Rep., 1968.
48. A. F. Malmberg, "NET-2 network analysis program,", Harry Diamond Lab. Tech. Rep., 1970.
49. J. P. Raymond and R. E. Johnson, "Detailed lumped-model analysis of transistor ionizing radiation effects," IEEE Trans. Nucl. Sci., vol. NS-13, p. 86, Dec. 1966.
50. A. H. Johnston and W. C. Bowman, "Effect of temperature on microcircuit radiation response," IEEE Trans. Nucl. Sci., vol. NS-15, p. 232, Dec. 1968.
51. W. C. Bowman, W. Beezhold, and A. H. Johnston, "Models for predicting transient radiation responses in microcircuits," IEEE Trans. Nucl. Sci., vol. NS-15, p. 279, Dec. 1968.
52. C. T. Kleiner, J. M. Tanke, and M. J. Romano, "Predicting combined neutron and gamma induced effects on a closed loop system," IEEE Trans. Nucl. Sci., vol. NS-15, p. 295, Dec. 1968.
53. W. H. Dierking, G. E. Katz, and E. L. Steele, "Transient radiation current generator model for semiconductor devices," IEEE Trans. Nucl. Sci., vol. NS-16, p. 144, Dec. 1969.
54. J.W. Crowe, "Analysis of radiation effects in and hardening of integrated circuit voltage regulators," IEEE Trans. Nucl. Sci., vol. NS-16, p. 186, Dec. 1969.
55. C. W. Gwyn, G. G Summers, and W. T. Corbett, "Modeling of the saturation characteristics of high voltage transistors," IEEE Trans. Nucl. Sci., vol. NS-17, p. 63, Dec. 1970.
56. W. T. Fredrik A and W. T. Lindholm, "Device characterization for computer analysis of large circuits," IEEE Trans. Nucl. Sci., vol. NS-18, p. 206, Dec. 1971.
57. J. I. Lubell and L. B. Gratt, "A computer-aided system approach to the radiation vulnerability of a divide by twenty counter," IEEE Trans. Nucl. Sci., vol. NS-18, p. 220, Dec. 1971.
58. L. B. David M and L. B. Long, "JFET Transient radiation response," IEEE Trans. Nucl. Sci., vol. NS-18, p. 332, Dec. 1971.
59. J. P. Raymond and M. G. Krebs, "Lumped model analysis of semiconductor devices using NET-2 circuit/system analysis program," IEEE Trans. Nucl. Sci., vol. NS-19, p. 103, Dec. 1972.
60. J. R. McEwan, "Computer simulation of radiation induced emitter crowding," IEEE Trans. Nucl. Sci., vol. NS-21, p. 353, Dec. 1974.
61. D. R. Alexander and R. M. Turfler, "An MOS modeling hierarchy including radiation effects," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2611, Dec. 1975.
62. C. T. Kleiner et al., "Modeling and test verification for hardened integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-26, p. 4763, Dec. 1979.
63. C. T. Kliener et al., "An improved bipolar transistor model for electrical and radiation effects," IEEE Trans. Nucl. Sci., vol. NS-29, p. 1569, Dec. 1982.
64. J. R. Florian et al., "Improved transient response modeling in ICs," IEEE Trans. Nucl. Sci., vol. NS-32, p. 1402, Dec. 1984.
65. R. L. Woodruff et al., "Predicting transient upset in gate arrays," IEEE Trans. Nucl. Sci., vol. NS-34, p. 1426, Dec. 1987.
66. J. J. Paulos et al., "Radiation-induced response of operational amplifiers in low level transient radition environments," IEEE Trans. Nucl. Sci., vol. 34, p. 1442, Dec. 1987.
67. A. A. Keshavarz, "Computer simulation of ionizing radiation burnout in power MOSFETs," IEEE Trans. Nucl. Sci., vol. 35, p. 1422, Dec. 1988.
68. C. P. Brothers et al., "Simulating total-dose and dose-rate effects on digital microelectronics timing delays using VHDL," IEEE Trans. Nucl. Sci., vol. 42, p. 1628, Dec. 1995.
69. A. M. Unwin and C. Rosenberg, "Improved radiation storage time predictions by a new approach to inverted transistor characterization," IEEE Trans. Nucl. Sci., vol. NS-15, p. 260, Dec. 1968.
70. J. G. Fossum H. H. Sander, and H. J. Gerwin, "The effects of ionizing radiation on diffused resistors," IEEE Trans. Nucl. Sci., vol. NS-21, p. 315, Dec. 1974.
71. W. Shedd and J. Capeelli, "The current limiting capability of diffused resistors," IEEE Trans. Nucl. Sci., vol. NS-26, p. 4720, Dec. 1979.
72. G. C. Messenger, "Conductivity modulation in diffused resistors at very high dose rate levels," IEEE Trans. Nucl. Sci., vol. NS-26, p 4725, Dec. 1979.
73. J. S. Nichols, D. R. Alexander, and G. N. Hittinger, "Characterization and modeling of the 709 integrated circuit operational amplifier," IEEE Trans. Nucl. Sci., vol. NS-16, p. 172, Dec. 1969.
74. J. P. Raymond, "Component vulnerability analysis of microcircuits," IEEE Trans. Nucl. Sci., vol. NS-17, p. 91, Dec. 1970.
75. D. N. Pocock and J. P. Raymond, "Simplified terminal models of complex linear microcircuits for use in computer aided systems analysis," IEEE Trans. Nucl. Sci., vol. NS-18, p. 212, Dec. 1971.
76. D. N. Pocock and M. G. Krebs, "Terminal modeling and photo compensation of complex microcircuits," IEEE Trans. Nucl. Sci., vol. NS-19, p. 86, Dec. 1972.
77. D. N. Pocock, "Computer aided vulnerability analysis of a digital-to-analog converter," IEEE Trans. Nucl. Sci., vol. NS-21, p. 340, Dec. 1974.
78. R. H. Dickhaut, "Simplified microcircuit modeling," IEEE Trans. Nucl. Sci., vol. NS-18, p. 227, Dec. 1971.
79. K. S. Chao, S. R. Liberty, R. H. Seacat, and M. A. Chipman, "Modeling IC's in an ionizing radiation environment with a time varying Wiener model," IEEE Trans. Nucl. Sci., vol. NS-19, p. 94, Dec. 1972.
80. J. R. Greenbaum, R. Horen, J. L. Andrews, and J. C. Peden, "Radiation models for digital integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-19, p. 96, Dec. 1972.
81. C. T. Kliener et al., "Terminal modeling of hardened integrated circuits," IEEE Trans. Nucl. Sci., vol. NS, p. 4334, Dec. 1981.
82. G. Kinoshita et al., "Radiation induced regeneration in ICs," IEEE Trans. Nucl. Sci., vol. NS-12, p. 83, Oct. 1965.
83. D. C. Wunsch and R. R. Bell, "Determination of threshold failure levels of semiconductor diodes and transistors due to pulse voltages," IEEE Trans. Nucl. Sci., vol. NS-15, no. 6, p. 244, Dec. 1968.
84. J. F. Leavy and R. A. Poll, "Radiation-induced integrated circuit latchup," IEEE Trans. Nucl. Sci., vol. NS-16, p. 96, Dec. 1969.
85. E. A. Carr and D. Binder, "Radiation induced second breakdown in transistors," IEEE Trans. Nucl. Sci., vol. NS-16, p. 120, Dec. 1969.
86. D. H. Habing, "The response of bipolar transistors to combined EMP and ionization environments," IEEE Trans. Nucl. Sci., vol. NS-17, p. 360, Dec. 1970.
87. D. Tasca, "Pulse power failure modes in semiconductors," IEEE Trans. Nucl. Sci., vol. NS-17, p. 364, Dec. 1970.
88. L. E. Clark and J. L. Saltich, "Optimized profiles for neutron and photocurrent hardened power transistors," IEEE Trans. Nucl. Sci., vol. NS-21, p. 149, Dec. 1974.
89. D. H. Rice, "Transient collector breakdown in the presence of conducted EMP and gamma radiation," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2500, Dec. 1975.
90. E. F. Hartman and D. C. Evans, "Electrical pulse burnout of transistors in intense ionizing radiation," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2528, Dec. 1975.
91. J. P. Raymond, T. Y. Wond, and K. K. Schuegraf, "Radiation effects on bipolar integrated injection logic," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2605, Dec. 1975.
92. J. L. Crowley, F. A. Junga, and T. J. Stultz, "Technique for selection of transient radiation-hard junction isolated integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-23, 1703, Dec. 1976.
93. L. L. Sivo, F. Rosen, and L. C. Jeffers, "Latchup screening of LSI devices," IEEE Trans. Nucl. Sci., vol. NS-25, p. 1534, Dec. 1978.
94. M. S. Cooper, J. P. Retzler, and G. C. Messenger, "High temperature Schottky TTL latchup," IEEE Trans. Nucl. Sci., vol. NS-25, p. 1538, Dec. 1978.
95. T. F. Wrobel and J. L. Azarewicz, "High dose rate burnout in silicon epitaxial transistors," IEEE Trans. Nucl. Sci., vol NS-27, p. 1411, Dec. 1980.
96. R. L. Pease, "Latch-up in bipolar LSI devices," IEEE Trans. Nucl. Sci., vol. NS-28, p. 4295, Dec. 1981.
97. J. J. Erickson et al., "Specification of LSI device input states for latch-up testing," IEEE Trans. Nucl. Sci., vol. NS-28, p. 4322, Dec. 1981.
98. J. L. Azarewicz et al., "Latchup window tests," IEEE Trans. Nucl. Sci., vol. NS-29, p. 1804, Dec. 1982.
99. F. N. Coppage et al., "Seeing through the latch-up window," IEEE Trans. Nucl. Sci., vol. NS-30, p. 4122, Dec. 1983.
100. T. F. Wrobel et al., "Current induced avalanche in epitaxial structures," IEEE Trans. Nucl. Sci., vol. NS-32, p. 3991, Dec. 1985.
101. A. H. Johnston and M. P. Baze, "Mechanisms for the latchup window effect in integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-32, p. 4018, Dec. 1985.
102. A. H. Johnston, "Experimental methods for determining latchup paths in integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-32, p. 4260, Dec. 1985.
103. M. P. Baze et al., "Latchup paths in bipolar integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-33, p. 1499, Dec. 1986.
104. T. F. Wunsch et al., "Transient radition hardness of the CMOSV 1.25 micron technology," IEEE Trans. Nucl. Sci., vol. 38, p. 1392, Dec. 1991.
105. J. S. Cable et al., "Validation of latch-up mitigation in complex VLSI circuits," IEEE Trans. Nucl. Sci., vol. NS-33, p. 1510, Dec. 1986.
106. L. W. Massengill and S. E. Diehl-Nagle, "Transient radiation upset simulations of CMOS memory circuits," IEEE Trans. Nucl. Sci., vol. NS-31, p. 1337, Dec. 1984.
107. L. W. Massengill et al., "Analysis of transient radition upset in a 2K SRAM," IEEE Trans. Nucl. Sci., vol. NS-32, p. 4026, Dec. 1985.
108. L. W. Massengill et al., "Dose-rate upset patterns in a 16K CMOS SRAM," IEEE Trans. Nucl. Sci., vol. NS-33, p. 1545, Dec. 1986.
109. M. R. Ackerman et al., "Factors contributing to CMOS static RAM upset," IEEE Trans. Nucl. Sci., p. 1524, Dec. 1986.
110. B. Bhuva et al., "Automated photocurrent and bussing extraction for dose-rate rail span collapse simulations," IEEE Trans. Nucl. Sci., vol. 37,p. 2104, Dec. 1990.
111. D. G. Mavis, D. R. Alexander, and G. L. Dinger, "A chip-level modeling approach for rail span collapse and survivability analyzes," IEEE Trans. Nucl. Sci., vol. 36, p. 2239, Dec. 1989.
112. W. G. Bartholet et al., "Edge rate induced upset in high speed circuits," IEEE Trans. Nucl. Sci., vol. NS-34, p. 1438, Dec. 1987.
113. W. J. Dennehy, A. G. Holmes-Siedle, and W. F. Leopold, "Transient radiation response of complementary-symmetry MOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-16, p. 114, Dec. 1969.
114. B. L. Gregory and B. D. Shafer, "Latch-up in CMOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-20, p. 293, Dec. 1973.
115. F. N. Coppage and D. C. Evans, "Characteristics of destruction from latchup in CMOS," IEEE Trans. Nucl. Sci., vol. NS-24, p. 2226, Dec. 1977.
116. A. Ochoa, W. Dawes, and D. Estreich, "Latch-up control in CMOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-26, p.5065, Dec. 1979.
117. J. R. Adams and R. J. Sokel, "Neutron irradiation for prevention of latch-up in MOS integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-26, p. 5069, Dec. 1979.
118. D. D. Huffman, "Prevention of radiation induced latchup in commercially available CMOS devices," IEEE Trans. Nucl. Sci., vol. NS-27, p. 1436, Dec. 1980.
119. P. V. Dressendorfer and M. G. Armendariz, "A SEM technique for experimentally locating latch-up paths in integrated circuits," IEEE Trans. Nucl. Sci., vl. NS-27, p. 1688, Dec. 1980.
120. J. E. Schroeder, A. Ochoa Jr., and P. V. Dressendorfer, "Latchup elimination in bulk CMOS LSI circuits," IEEE Trans. Nucl. Sci., vol. NS-27, p. 1735, Dec. 1980.
121. P. V. Dressendorfer and A. Ochoa, "An analysis of the modes of operation of parasitic SCRs," IEEE Trans. Nucl. Sci., vol. NS-28, p. 4288, Dec. 1981.
122. A. Ochoa and P. V. Dressendorfer, "A discussion of the role of distributed effects in latch-up," IEEE Trans. Nucl. Sci., vol. NS-28, p. 4292, Dec. 1981.
123. T. J. Stultz et al., "Computer-aided latch-up analysis of integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-28, p. 4311, Dec. 1981.
124. A. Ochoa, Jr., et al., "Snap-back: A stable, regerative breakdown mode for MOS devices," IEEE Trans. Nucl. Sci., vol. NS-30, p. 4127, Dec. 1983.
125. Y. Song et al., "The dependence of latch-up sensitivity on layout features in CMOS integrated circuits," IEEE Trans. Nucl. Sci., p. 1493, Dec. 1986.
126. H. Hatano, "Total dose radiation-hardened latch-up free CMOS structures for radiation-tolerant VLSI designs," IEEE Trans. Nucl. Sci., vol. NS-33, p. 1505, Dec. 1986.
127. M. P. Baze et al., "Testing considerations for radiation induced latchup," IEEE Trans. Nucl. Sci., vol. NS-26, p. 1730, Dec. 1987.
128. Y. Song et al., "Parametric investigation of latch-up sensitivity in 1.25 micron CMOS technology," IEEE Trans. Nucl. Sci., p. 1431, Dec. 1987.
129. R. E. Plaag et al., "A distributed model for radiation-induced latchup," IEEE Trans. Nucl. Sci., p. 1563, Dec. 1988.
130. A. H. Johnston et al., "The effect of circuit topology on radiation induced latchup," IEEE Trans. Nucl. Sci., p. 2229, Dec. 1989.
131. T. Chapuis et al., "Latchup in CMOS/epi devices," IEEE Trans. Nucl. Sci., vol. 37, p. 1839, Dec. 1990.
132. D. K. Nichols and R. L. Nielsen, "A comparison of the ionizing radiation response of microcircuits manufactured by five different technologies," IEEE Trans. Nucl. Sci., vol. NS-16, p. 181, Dec. 1969.
133. D. M. Long, "Hardness of MOS and bipolar integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-27, p. 1674, Dec. 1980.
134. J. G. Aiken, J. S. Crabbe, and H. W. Spence, "Design and performance of an integrated circuit flip flop with photocurrent compensation," IEEE Trans. Nucl. Sci., vol. NS-16, p. 177, Dec. 1969.
135. R. H. Vandre, "Effects of shadows on photocurrent compensated integrated circuits," IEEE Trans. Nucl. Sci., vol. NS-20, p. 180, Dec. 1973.
136. R. J. Olson, D. R. Alexander, and R. J. Antinone, "Radiation response study of new radiation-hardened low power TTL series," IEEE Trans. Nucl. Sci., vol. NS-18, p. 243, Dec. 1971.
137. R. A. Kjar and J. E. Bell, "Characteristics of MOS circuits for radiation-hadened aerospace systems," IEEE Trans. Nucl. Sci., vol. NS-18, p. 258, Dec. 1971.
138. R. A. Kjar and G. Kinoshita, "Transient photocurrents in SOS structures," IEEE Trans. Nucl. Sci., vol. NS-20, p. 315, Dec. 1973.
139. D. H. Phillips, "Silicon-on-sapphire device photoconduction predictions," IEEE Trans. Nucl. Sci., vol. NS-21, p. 217, Dec. 1974.
140. ____, "CMOS/SOS NAND gate sapphier photocurrent compensation," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2617, Dec. 1975.
141. G. J. Brucker, "Transient and steady state radiation response of CMOS/SOS," IEEE Trans. Nucl. Sci., vol. NS-21, no. 6, p. 201, Dec. 1974.
142. G. J. Brucher, "Properties of full decoded 256-bit MONS/PMOS/SOS memory in radiation environment," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2621, Dec. 1975.
143. R. L. Nielsen, D. T. Butcher, and R. S. Ronen, "Electrical and radiation characteristics of MOS/SOS linear devices," IEEE Trans. Nucl. Sci., vol. NS-22, p. 2629, Dec. 1975.
144. L. J. Palkuti and R. Pryor, "Radiation-hard CMOS/SOS standard cell circuits," IEEE Trans. Nucl. Sci., vol. NS-23, p. 1715, Dec. 1976.
145. G. J. Brucker and B. R. Parson, "Radiation test and simulation of CMOS/SOS/SI-gate ALU and ROM devices," IEEE Trans. Nucl. Sci., vol. NS-23, p. 1720, Dec. 1976.
146. R. A. Kjar, B. E. Peterson, and J. T. Blandford, "Radiation hardened 64-bit CMOS/SOS RAM," IEEE Trans. Nucl. Sci., vol. NS-23, p. 1728, Dec. 1976.
147. G. J. Brucker, "Characteristics of CMOS/bulk and SOS memories in a transient environment," IEEE Trans. Nucl. Sci., vol. NS-24, p. 2209, Dec. 1977.
148. L. J. Palkuti, H. W. Kaiser, J. I. Pridgen, and B. J. Wilson, "Ultra-high upset, megarad-hard Si-gate CMOS/SOS code generator," IEEE Trans. Nucl. Sci., vol. NS-25, p. 1181, Dec. 1978.
149. T. P. Haraszti, "Radiation hardened CMOS/SOS memory circuits," IEEE Trans. Nucl. Sci., vol. NS-25, p. 1187, Dec. 1978.
150. G. J. Brucker et al., "Transient radiation response of hardened CMOS/SOS microprocessor and memory devices," IEEE Trans. Nucl. Sci., vol. NS-27, p. 1432, Dec. 1980.
151. R. Berger et al., "Transient and total dose radiation properties of the CMOS/SOS EPIC chip set," IEEE Trans. Nucl. Sci., vol. NS-30, p. 4256, Dec. 1983.
152. G. J. Brucker et al., "Sapphire photocurrent sources and their impact on RAM upset," IEEE Trans. Nucl. Sci., vol. NS-33, p. 1377, Dec. 1986.
153. M. Bruel, "Silicon on insulator material technology," Electron. Lett., vol. 31, p. 1701, 1995.
154. J.-P. Colinge, "Silicon-on-insulator technology: Overview and device physics," in 2001 IEEE NSREC Short Course, July 2001, pp. II-1-II-64.
155. M. L. Alles, "A lumped-parameter model for simulation of single-event radiation effects on small-geometry silion-on-insulator transistors," Masters dissertation, Vanderbilt Univ., Aug. 1990.
156. G. E. Davis et al., "Transient radiation effects in SOI memories," IEEE Trans. Nucl. Sci., vol. NS-32, p. 4432, Dec. 1985.
157. R. E. Mikawa et al., "Transient radiation effects in SOI static RAM cells," IEEE Trans. Nucl. Sci., vol. NS-34, p. 1698, Dec. 1987.
158. J. L. Leray et al., "From substrate to VLSI: Investigation of hardened SIMOX without epitaxy, for dose, dose rate, and SEU," IEEE Trans. Nucl. Sci., p. 1355, Dec. 1988.
159. O. Musseau et al., "Laser probing of bipolar amplification in 0.25 micron MOS/SOI transistors," IEEE Trans. Nucl. Sci., p. 2196, Dec. 2000.
160. T. Gasiot et al., "Insights on the transient response of fully and partially depleted SOI technologies under heavy-ion and dose rate irradiations," IEEE Trans. Nucl. Sci., vol. 49, p. 2948, Dec. 2002.