Photovoltage in free-standing mesoporous silicon layers

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 1, 2003, Pages 107-112

  Dittrich, Th ^a,b   Duzhko, V ^b,c  

^a HAHN MEITNER INSTITUT   (Germany)

^b TECHNICAL UNIVERSITY OF MUNICH   (Germany)

^c NEW JERSEY INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION; DIELECTRIC RELAXATION; HYDROGENATION; OXIDATION; SEMICONDUCTOR QUANTUM WIRES; SPECTRUM ANALYSIS;

MESOPOROUS SILICON; PHOTOVOLTAGE; SILICON NANOPARTICLES;

POROUS SILICON;

EID: 0037701314     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306477     Document Type: Conference Paper

References (14)

1. M. J. Sailor in: "Properties of Porous Silicon", edited by L. Canham (INSPEC, London, 1997) p. 364.
2. B. O'Reagan and M. Grätzel, Nature 353, 737 (1991).
3. N. Serpone and R. F. Khairutdinov, Eds. "Application of Nanoparticles in the Photocatalytic Degradation of Water Pollutants", (Elsevier, Amsterdam, 1996) p. 417.
4. Review by L. Kronik and Y. Shapira, Surface Science Reports 37, 1 (1999).
5. V. Yu. Timoshenko, V. Duzhko, and Th. Dittrich, phys. stat. sol. (a) 182, 227 (2000).
6. V. Duzhko, V. Yu. Timoshenko, F. Koch, and Th. Dittrich, Phys. Rev. B 64, 075204 (2001).
7. V. Duzhko, Th. Dittrich, B. Kamenev, V. Yu. Timoshenko, and W. Brütting, J. Appl. Phys. 89, 4410 (2001).
8. A. Halimaoui in: "Properties of Porous Silicon", edited by L. Canham (INSPEC, London, 1997) p. 12.
9. Th. Dittrich, M. Schwartzkopff, E. Hartmann, and J. Rappich, Surf. Sci. 437 (1999) 154, and refs. therein.
10. M. Ben-Chorin in: "Properties of Porous Silicon" edited by L. Canham (INSPEC, London, 1997) p. 165 and refs. therein.
11. V. Yu. Timoshenko, Th. Dittrich, V. Lysenko, M. G. Lisachenko, and F. Koch. Phys. Rev. B 64, 085314 (2001).
12. A. Grosman and C. Ortega in "Properties of Porous Silicon", edited by L. Canham (INSPEC, London, 1997) p. 145, and refs. therein.
13. T. H. Metzger et al. in "Properties of Porous Silicon", edited by L. Canham (INSPEC, London, 1997) p. 112.
14. See, for example, U. Neuwald et al. J. Appl. Phys. 78, 4131 (1995).