Frequency dependence of capacitance of Au/n-GaAs Schottky diode under hydrostatic pressure

International Journal of Electronics

Volumn 89, Issue 10, 2002, Pages 745-752

  Çankaya, Güven ^a   Uçar, Nazim ^b  

^a ATATÜRK UNIVERSITY   (Turkey)

^b SULEYMAN DEMIREL UNIVERSITY   (Turkey)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CAPACITORS; GOLD; HYDROSTATIC PRESSURE; LIQUID PHASE EPITAXY; OHMIC CONTACTS; PRESSURE EFFECTS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR DEVICE MANUFACTURE; SILICON WAFERS; WATER;

FREQUENCY DEPENDENCE; IONIZED DEFECT CONCENTRATION; PRESSURE-SENSITIVE CAPACITOR; ULTRASONIC VIBRATION;

SCHOTTKY BARRIER DIODES;

EID: 0037693998     PISSN: 00207217     EISSN: None     Source Type: Journal    
DOI: 10.1080/0020721031000093138     Document Type: Article

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