Novel post CMP cleaning using buffered HF solution and ozone water

Applied Surface Science

Volumn 216, Issue 1-4 SPEC., 2003, Pages 46-53

  Yeh, Ching Fa ^a   Hsiao, Chih Wen ^a   Lee, Wen Shan ^a  

^a NATIONAL CHIAO TUNG UNIVERSITY   (Taiwan)

Author keywords

BTA; Buffered HF; Cu; Ozone water; Post CMP cleaning

Indexed keywords

ALUMINUM ALLOYS; CHEMICAL POLISHING; CONTAMINATION; COPPER; DIELECTRIC MATERIALS; ELECTROMIGRATION; ETCHING; FLUORINE COMPOUNDS; MELTING; OZONE; SILICA; SURFACE ROUGHNESS; WATER;

CHEMICAL MECHANICAL POLISHING (CMP) CLEANING;

CHEMICAL CLEANING;

EID: 0037670161     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00496-3     Document Type: Conference Paper

References (5)

1. Beverina A., Bernard H., Palleau J., Torres J., Tardif F. Copper photocorrosion phenomenon during post CMP cleaning. Electrochem. Solid State Lett. 3(3):2000;156.
2. J.M. Steigerwald, S.P. Murarka, D.J. Duquette, R.J. Gutmann, Surface layer formation during the chemical mechanical polishing of copper thin films, in: Proceedings of the Symposium on Technology and Manufacturability of Material Research Society, Pittsburgh, PA, USA, 1994, p. 133.
3. Steinbruchel C. Patterning of copper for multilevel metallization: reactive ion etching and chemical mechanical polishing. Appl. Surf. Sci. 91:1995;139.
4. 2 O addition only. J. Electrochem. Soc. 141(11):1994;3177.
5. Lee J.C., Chen I.C., Hu C. Modeling and characterization of gate oxide reliability. IEEE Trans. Electron Devices. 35(12):1988;2268.