Comment on "quantitative analysis of annealing-induced structure disordering in ion-implanted amorphous silicon," by Ju-Yin Cheng et al., J. Vacuum Science and Technology A 20, 1855 (2002)

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 21, Issue 3, 2003, Pages 827-

  Roorda, Sjoerd ^a  

^a UNIVERSITÉ DE MONTRÉAL   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVATION ENERGY; ANNEALING; CALORIMETRY; CRYSTAL STRUCTURE; CRYSTALLIZATION; ELECTRON MICROSCOPY; GRANULAR MATERIALS; ION IMPLANTATION; REACTION KINETICS; RELAXATION PROCESSES; TEMPERATURE MEASUREMENT; THERMAL EFFECTS;

ANNEALING-INDUCED STRUCTURE DISORDERING; FLUCTUATION ELECTRON MICROSCOPY; MEDIUM-RANGE ORDER; STRUCTURAL RELAXATION; TEMPERATURE DEPENDENCE;

AMORPHOUS SILICON;

EID: 0037665256     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1570833     Document Type: Note

References (3)

1. J.-Y. Cheng, J. M. Gibson, P. M. Baldo, and B. J. Kestel, J. Vac. Sci. Technol. A 20, 1855 (2002).
2. S. Roorda, W. C. Sinke, J. M. Poate, D. C. Jacobson, S. Dierker, B. S. Dennis, D. J. Eaglesham, F. Spaepen, and P. Fuoss, Phys. Rev. B 44, 3702 (1991).
3. S. Roorda, Nucl. Instrum. Methods Phys. Res. B 148, 366 (1999).