Plasma etch of AZ5206/Cr and ZEP7000/Cr for 0.18-0.25 μm generation advanced mask fabrication

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 3412, Issue , 1998, Pages 149-162

  Tsai, W ^a   Chen, F ^a   Kamna, M ^a   Chegwidden, S ^a   Labovitz, S ^a   Farnsworth, J ^a   Dao, G ^a  

^a INTEL CORPORATION   (United States)

Author keywords

Clearfield photomask; Plasma etch; Proximity; Resist loading

Indexed keywords

ELECTRON BEAMS; MICROPROCESSOR CHIPS; PHOTORESISTS; PLASMA ETCHING; REACTIVE ION ETCHING;

MAGNETIC-ENHANCED REACTIVE-ION ETCH; PHOTOMASK; RESIST LOADING;

MASKS;

EID: 0037660141     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.328796     Document Type: Conference Paper

References (6)

1. S. Aoyama, H. Kusunose, M. Hanazaki, N. Yoshioka and Y. Watakabe "Advanced process with magnetically enhanced RIE for phase shift mask fabrication" Proc. SPIE Vol. 1927, p. 715, (1993)
2. C. Constantine, D. Johnson, R.J. Westerman, T. Coleman, T. Faure, "Plasma etching of Cr photomasks: parametric comparisons of plasma sources and process conditions", Proc. SPIE Vol. 3096, p. 11 (1997).
3. T. Coleman and P. Buck, "Plasma Etching of Chromium Films in the Fabrication of Photomasks", Proc. SPIE Vol. 2621, p62, (1995).
4. J. Kinsley (C. Evans Associates, Redwood City, CA), private communication
5. Veeco Instruments, Santa Barbara, CA
6. A. Kornblit, J. DeMarco, J. Garofalo, D. Mixon, A. Novembre, S. Vaidya and T. Kook, "Role of etch pattern fidelity in the printing of optical proximity corrected photomasks", J. Vac. Sci. Technol. B, 13, p2944 (1995).