Design of a 600 V silicon carbide vertical power MOSFET

Materials Science and Engineering B

Volumn 61-62, Issue , 1999, Pages 497-501

  Planson, D ^a   Locatelli, M L ^a   Lanois, F ^a   Chante, J P ^a  

^a CNRS   (France)

Author keywords

2D simulation; Silicon carbide; Vertical MOSFET

Indexed keywords

COMPUTER SIMULATION; ELECTRIC POTENTIAL; POWER ELECTRONICS; SEMICONDUCTING SILICON COMPOUNDS; SILICON CARBIDE;

POWER MOSFETS;

MOSFET DEVICES;

EID: 0037596958     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(98)00461-9     Document Type: Article

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