Porous silicon photoluminescence modification by surface treatments and impregnation of carbon based nanoclusters

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 2, 2003, Pages 355-359

  Makara, V A ^a   Klyui, N I ^b   Rozhin, A G ^b   Litovchenko, V G ^b   Piryatinskii, Yu P ^c   Korneta, O B ^a  

^a TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^b INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^c INSTITUTE OF PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

DEPOSITION; DIAMOND LIKE CARBON FILMS; IMPREGNATION; LIGHT EMISSION; PHOTOLUMINESCENCE; RAPID THERMAL ANNEALING; SEMICONDUCTOR QUANTUM WIRES; SILICON CARBIDE; SURFACE TREATMENT;

HYDROGEN PLASMA TREATMENT; PHOTOLUMINESCENCE INTENSITY;

POROUS SILICON;

EID: 0037595547     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306524     Document Type: Conference Paper

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