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Physica Status Solidi (A) Applied Research

Volumn 197, Issue 2, 2003, Pages 436-440

The Si-H-B complex in p+-type porous silicon: A theoretical approach

(2) Borini, S a Ugliengo, P b

a ISTITUTO ELETTROTECNICO NAZIONALE GALILEO FERRARIS (Italy)

b UNIVERSITY OF TURIN (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL STRUCTURE; CRYSTALLINE MATERIALS; ELECTRIC CONDUCTIVITY OF SOLIDS; FOURIER TRANSFORM INFRARED SPECTROSCOPY; HYDROGEN; MATHEMATICAL MODELS; MOLECULAR DYNAMICS; MOLECULAR VIBRATIONS; POROSITY; SEMICONDUCTING BORON;

CHARGE CARRIERS PASSIVATION; CRYSTALLINE SILICON;

POROUS SILICON;

EID: 0037595541 PISSN: 00318965 EISSN: None Source Type: Journal
DOI: 10.1002/pssa.200306540 Document Type: Conference Paper

Times cited : (4)

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