A Monte Carlo simulation of ballistic transport in nanocrystalline silicon diode

Physica Status Solidi (A) Applied Research

Volumn 197, Issue 2, 2003, Pages 452-457

  Kojima, A ^a   Koshida, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

COMPUTER SIMULATION; ELECTRIC FIELDS; ELECTRON ENERGY LEVELS; ELECTRON TRANSPORT PROPERTIES; ELECTRON TUNNELING; GOLD; MONTE CARLO METHODS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING SILICON; SUPERLATTICES; THIN FILMS;

BALLISTIC TRANSPORT; NANOCRYSTALLINE SILICON DIODE; QUASI-BALLISTIC TRANSPORT; THERMAL EQUILIBRIUM;

SEMICONDUCTOR DIODES;

EID: 0037595527     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssa.200306543     Document Type: Conference Paper

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