Evidence of enlarged drift length in nanocrystalline porous silicon layers by time-of-flight measurements

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 40, Issue 4 B, 2001, Pages 2779-2781

  Kojima, A ^a   Koshida, N ^a  

^a TOKYO UNIVERSITY OF AGRICULTURE AND TECHNOLOGY   (Japan)

Author keywords

Drift length; Mobility lifetime product; Nanocrystal; Porous silicon; Time of flight

Indexed keywords

ELECTRIC FIELD EFFECTS; ELECTRON TRANSPORT PROPERTIES; KINETIC ENERGY; NANOSTRUCTURED MATERIALS; PHOTOCURRENTS;

DRIFT LENGTH; TIME OF FLIGHT MEASUREMENTS (TOF);

POROUS SILICON;

EID: 0035300688     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.40.2779     Document Type: Article

References (11)