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Chinese Physics Letters

Volumn 16, Issue 10, 1999, Pages 758-760

Ultrafast heavy hole-phonon scattering in highly n-doped GaAs

(6) Lin, Wei zhu a Huang, Chun a Zhang, Hai chao a Wen, Jin hui a Guo, Bing a Lai, Tian shu a

a SUN YAT SEN UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DOPING (ADDITIVES); ELECTRON SCATTERING; III-V SEMICONDUCTORS; PHONON SCATTERING; PHONONS; SEMICONDUCTING GALLIUM;

ABSORPTION SATURATION MEASUREMENTS; FEMTOSECOND ABSORPTION; FERMI EDGE; HEAVY HOLES; N-DOPED; PHONON INTERACTIONS; PHOTON ENERGY; PROBE PHOTONS; PUMP PROBE; ULTRA-FAST;

GALLIUM ARSENIDE;

EID: 0033464831 PISSN: 0256307X EISSN: None Source Type: Journal
DOI: 10.1088/0256-307X/16/10/021 Document Type: Article

Times cited : (4)

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