Structural evolution in Ge + implantation amorphous Si

Applied Surface Science

Volumn 212-213, Issue SPEC., 2003, Pages 325-328

  He, J H ^a   Wu, W W ^a   Lin, H H ^a   Cheng, S L ^a   Chueh, Y L ^a   Chou, L J ^a   Chen, L J ^a  

^a NATIONAL TSING HUA UNIVERSITY   (Taiwan)

Author keywords

Auto correlation function; High resolution TEM; Ion implantation; Nanocrystallite; Preamorphization

Indexed keywords

AMORPHIZATION; ANNEALING; CORRELATION METHODS; HIGH TEMPERATURE EFFECTS; ION IMPLANTATION; MATHEMATICAL MODELS; NANOSTRUCTURED MATERIALS; SEMICONDUCTING GERMANIUM; SILICON WAFERS; TRANSMISSION ELECTRON MICROSCOPY;

CONTINUOUS RANDOM NETWORKS (CRN);

AMORPHOUS SILICON;

EID: 0037566067     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0169-4332(03)00094-1     Document Type: Conference Paper

References (28)

1. M. Ono, M. Saito, T. Yoshitomi, C. Fiegna, T. Ohguro, H. Iwai, IEEE IEDM 1995 Tech. Digest, 1995, p. 119.
2. Ajmera A.C., Rozgonyi G.A. Appl. Phys. Lett. 49:1986;1269.
3. Cheng J.Y., Gibson J.M., Jacobson D.C. J. Mater. Res. 16:2001;3030.
4. Cheng S.L., Lin H.H., He J.H., Chiang T.F., Yu C.H., Chen L.J. J. Appl. Phys. 92:2002;910.
5. Chen L.J., Cheng S.L., Yu C.H., Su P.Y., Lin H.H., Chi K.S. Int. J. Mod. Phys. B. 16:2002;1.
6. Polk D.E., Boudreaux D.S. Phys. Rev. Lett. 31:1973;92.
7. Wooten F., Weaire D., Winer K. Phys. Rev. Lett. 54:1985;1392.
8. Phillips J.C., Bean J.C., Wilson B.A., Ourmazd A. Nature. 325:1987;121.
9. Gibson J.M., Treacy M.M.J. Phys. Rev. Lett. 78:1997;1074.
10. Treacy M.M.J., Gibson J.M., Keblinski P.J. J. Non-Cryst. Solids. 231:1998;99.
11. Laaziri K., Kycia S., Roorda S., Chicoine M., Robertson J.L., Wang J., Moss S.C. Phys. Rev. Lett. 82:1999;3460.
12. Moss S.C., Graczyk J.F. Phys. Rev. Lett. 23:1969;1167.
13. Temkin R.J., Paul W., Connell G.A.N. Adv. Phys. 22:1973;581.
14. Etherington G., Wright A.C., Wenzel J.T., Dore J.C., Clarke J.H., Sinclair R.N. J. Non-Cryst. Solids. 48:1982;265.
15. Filipponi A., Evangelisti F., Benefatto M., Mobilio S., Natoli C.R. Phys. Rev. B. 40:1989;9636.
16. Polk D.E. J. Non-Cryst. Solids. 5:1971;365.
17. Popescu M. J. Non-Cryst. Solids. 75:1985;477.
18. B.E. Warren, X-Ray Diffraction, Addison-Wesley, Reading, MA, 1959.
19. H.C.H. Spence, Experimental High Resolution Microscopy, Oxford University Press, New York, 1988.
20. Liang J.M., Chen L.J. Appl. Phys. Lett. 64:1994;1224.
21. Chang S.M., Huang H.Y., Yang H.Y., Chen L.J. Appl. Phys. Lett. 74:1999;224.
22. Chen L.J. Mater. Sci. Eng. R. 29:2000;115.
23. J.M. Cowley, Diffraction Physics, North-Holland, Amsterdam, 1981, p. 286.
24. Fan G.Y., Cowley J.M. Ultramicroscopy. 17:1985;345.
25. J.F. Ziegler, Ion Implantation Science and Technology, Academic Press, San Diego, CA, 1988.
26. Songsiriritthigul P., Holmen G., Olsson E. Nucl. Instrum. Method B. 122:1997;630.
27. Keblinski P., Phillpot S.R., Wolf D. Phys. Rev. Lett. 77:1996;2965.
28. Spinella C., Lombardo S., Campisano S.U. Phys. Rev. Lett. 66:1991;1102.