High-irradiance degradation tests on concentrator GaAs solar cells

Progress in Photovoltaics: Research and Applications

Volumn 11, Issue 4, 2003, Pages 249-254

  Rey Stolle, Ignacio ^a   Algora, Carlos ^a  

^a UNIVERSIDAD POLITÉCNICA DE MADRID   (Spain)

Author keywords

Concentrator solar cells; Degradation; III V semiconductors

Indexed keywords

DEGRADATION; IRRADIATION; METALLORGANIC VAPOR PHASE EPITAXY; MONOCHROMATORS; PHOTONS; SEMICONDUCTING GALLIUM ARSENIDE; SHORT CIRCUIT CURRENTS;

CONCENTRATOR SOLAR CELL; HIGH-IRRADIANCE DEGRADATION; REVERSE CURRENT;

SOLAR CELLS;

DEGRADATION; IRRADIATION; PHOTOVOLTAIC SYSTEM; SEMICONDUCTOR;

EID: 0037561526     PISSN: 10627995     EISSN: None     Source Type: Journal    
DOI: 10.1002/pip.487     Document Type: Article

References (13)

1. Yamaguchi M, Luque A. High efficiency and high concentration in photovoltaics. IEEE Transactions on Election Devices 1999; 46(10): 2139-2144.
2. Algora C, Ortiz E, Rey-Stolle I. Díaz, V, Peña R, Andreev VM, Khovostikov VP, Rumyantsev VD. A GaAs solar cell with an efficiency of 26.2% at 1000 suns and 25.0% at 2000 suns. IEEE Transactions on Election Devices 2001; 48(5): 840-844.
3. xAs tandem solar cells for space and terrestrial concentrator applications at C > 1000 suns. Progress in Photovoltaics: Research and Applications 2001; 9: 165-178.
4. Algora C, Rey-Stolle I, Ortiz E. Towards 30% efficient single junction GaAs solar cells. Proceedings of the 17th European PVSC 2001; 88-91.
5. Rey-Stolle I, Algora, C. Reliability and degradation of high concentrator GaAs solar cells. Proceedings of the 17th European PVSC 2001; 2223-2226.
6. Anspaugh, B, Kachare R, Iles P. Photon degradation in AlGaAs/GaAs solar cells. Proceedings of the 20th IEEE PVSC 1998; 985-989.
7. Gregory PE, Borden PG, Ludowise MJ, Cooper CB, Saxena RR. Performance and durability of AlGaAs/GaAs concentrator cells. Proceedings of the 15th IEEE PVSC 1981; 147-150.
8. Gasner S, Pack G, Gates M, Given R. Stability of GaAs/Ge solar cells with standard front contacts after long-term, high-temperature exposure. Proceedings of the 21st IEEE PVSC 1990; 1314-1319.
9. Michael S, Cypranowski, C, Anspaugh, B. Forward biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cells. Proceedings of the 21st IEEE PVSC 1990; 1178-1183.
10. Rey-Stolle I, Algora C, Ortíz E, Peña R, Díaz V, Smekens G, de Villers T. Development of MOCVD-grown high efficiency terrestrial concentrator GaAs solar cells. Proceedings of the 16th European PVSC 2000; 1042-1045.
11. Stellwag TB, Dodd PE, Lundstrom MS, Pieret RF, Melloch MR, Yablonovitch E, Gmitter TJ. Effects of perimeter recombination on GaAs-Based solar cells. Proceedings of the 21st IEEE PVSEC 1990; 442-447.
12. Dodd PE, Stellwag TB, Melloch MR, Lundstrom MS. Surface and perimeter recombination in GaAs diodes. IEEE Transactions on Electron Devices 1991; 38(6): 1253-1261.
13. Díaz V, Algora C. The influence of perimeter recombination in the design of very high concentrator GaAs solar cells. Proceedings of the 16th European PVSC 2000; 1034-1037.