The role of sample rotation and oblique ion incidence on quantum-dot formation by ion sputtering

Applied Physics A: Materials Science and Processing

Volumn 74, Issue 1, 2002, Pages 131-133

  Frost, F ^a  

^a LEIBNIZ INSTITUTE OF SURFACE ENGINEERING IOM   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

ANISOTROPY; CONSTRAINT THEORY; SPUTTERING;

COLLISION CASCADE; ION SPUTTERING;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0037527061     PISSN: 09478396     EISSN: None     Source Type: Journal    
DOI: 10.1007/s003390101029     Document Type: Review

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6. The validity of the relation σ > μ for many ion/target combinations can be verified using the simulation code SRIM 2000 (J.F. Ziegler, J.P. Biersack, U. Littmark: The Stopping and Range of Ions in Solids (Pergamon, New York 1985))
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