Raman scattering and infrared absorption of silicon nanocrystals in silicon oxide matrix

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 4086, Issue , 2000, Pages 258-261

  Ma, Zhixun ^a,b   Liao, Xianbo ^a   Zheng, Weimin ^b   Yu, Jian ^b   Chu, Junhao ^b  

^a INSTITUTE OF SEMICONDUCTORS   (China)

^b SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

Infrared absorption; Nanocrystalline Silicon; Phonon Confinement; Raman Scattering

Indexed keywords

ANNEALING; CHEMICAL BONDS; INFRARED ABSORPTION; LIGHT ABSORPTION; NANOCRYSTALLINE SILICON; NANOCRYSTALLITES; NANOCRYSTALS; OXIDE FILMS; RAMAN SCATTERING; SILICA; SILICON OXIDES; STRETCHING;

AMORPHOUS-LIKE; INFRARED SPECTRUM; MIXED STRUCTURE; SILICON NANOCRYSTALLITES; SILICON NANOCRYSTALS; SILICON SUB OXIDES; STRETCHING VIBRATIONS; STRUCTURAL DEPENDENCE;

AMORPHOUS SILICON;

EID: 0037511026     PISSN: 0277786X     EISSN: 1996756X     Source Type: Conference Proceeding    
DOI: 10.1117/12.408447     Document Type: Conference Paper

References (13)

1. H. Richter, Z. P. Wang, and L. Lay, "The One Phonon Raman Spectrum in Microcrystalline Silicon," Solid State Commu. 39,pp. 625-629, 1981.
2. Jian Zi, H. Buscher, C. Falter, W. Ludwig, K. Zhang, and X. Xie, "Raman Shift in Si Nanocrystals," Appi. Phys. Lett. 69(2), pp. 200-202, 1996.
3. A. T. Voutsas, M. K. Hatalis, J. Boyce, and A. Chiang, "Raman Spectroscopy of Amorphous and Microcrystalline Silicon Films Deposited by Low-pressure Chemical Vapor Deposition," I Appi. Phys. 78(12), pp. 6999-7006, 1995.
4. Paul A. Temple and C. E. Hathaway, "Multiphonon Raman Spectrum of Silicon," Phys. Rev. B 7(8), pp. 3658-3697, 1973.
5. V. Paillard, P. Puech, M. A. Laguna, P. Temple-Boyer, B. Caussat, J. P. Couderc, and B. De Mauduit, "Resonant Raman scattering in polycrystalline silicon thin films," Appl. Phys. Lett. 73(12), pp. 1718-1720, 1998.
6. J. C. Tsang, M. A. Tischler, R. T. Collins, "Raman scattering from H or 0 terminated porous silicon," Appl. Phys. Lett. 60(18), pp. 2279-2281, 1992.
7. Guozhen Yue, J. D. Lorentzen, Jing Lin, Daxing Han, and Qi Wang, "Photolumonescence and Raman Studies in thin-film materials: Transition from amorphous to microcrystalline silicon" Appl. Phys. Left. 75(4), pp. 49 2-494, 1999.
8. V. A. Volodin, M. D. Efremov, V. A. Gritsenko, and S. A. Kochubei, "Ranian study of silicon nanocrystals formed in SiNx films by eximer laser or thermal annealing," Appl. Phys. Lett. 73, pp. 1212, 1998.
9. Z. Iqbal, and Veprek, "Raman scattering from hydrogenated microcrystalline and amorphous silicon," I Phys. C: S'olid State Phys. 15, pp. 377-392, 1982.
10. Guang-Xu Cheng, Hua Xia, Kun-Ji Chen, Wei Zhang, and Xing-Kui Zhang, "Raman measurement of the Grain Size for Silicon Crystallites," Phys.stat. sol. (a) 118, pp. K51-K54, 1990.
11. D. V. Tsu, G. Lucovsky, and B. N. Davidson, " Effects of the nearest neighbors and the alloy matrix on SiH strentching vibrations in the amorphous SiOr:H (0
12. P. Bruesch, Th. Stockmeier, F. Stucki, and P. A. Buffat, "Physical properties of semi-insulating polycrystalline silicon. I. structure, electronic properties, and electrical conductivity," J. Appl. Phys. 73, pp. 7677, 1993.
13. P. G. Pai, S. S. Chao, Y. Takagi, and G. Lucovsky, "Infrared spectroscopic study of SiOx films produced by plasma enhanced chemical vapor deposition," I Vac. Sd. Technol. A4, pp. 689, 1986.