Mid-infrared (λ = 2.775 μm) injection laser based on AlGaAsSb/InAs/CdMgSe hybrid double heterostructure grown by molecular-beam epitaxy

Semiconductors

Volumn 37, Issue 6, 2003, Pages 736-739

  Ivanov, S V ^a   Moiseev, K D ^a   Kaigorodov V A ^a   Solov'ev, V A ^a   Sorokin, S V ^a   Meltser, B Ya ^a   Grebenshchikova, E A ^a   Sedova, I V ^a   Terent'ev, Ya V ^a   Semenov, A N ^a   Astakhova, A P ^a   Mikhailova M P ^a   Toropov, A A ^a   Yakovlev, Yu P ^a   Kop'ev, P S ^a   Alferov, Zh I ^a  

^a IOFFE INSTITUTE   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0037482969     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1582546     Document Type: Article

References (17)

1. U. P. Schliessl and J. Rohr, Infrared Phys. Technol. 40, 325 (1999).
2. D. Hofstetter, M. Beck, T. Aellen, et al., Appl. Phys. Lett. 78, 1964 (2001); S. Slivken, Z. Huang, A. Evans, and M. Razeghi, Appl. Phys. Lett. 80, 4091 (2002).
3. D. Hofstetter, M. Beck, T. Aellen, et al., Appl. Phys. Lett. 78, 1964 (2001); S. Slivken, Z. Huang, A. Evans, and M. Razeghi, Appl. Phys. Lett. 80, 4091 (2002).
4. C. Gmachl, A. M. Sergent, A. Tredicucci, et al., IEEE Photonics Technol. Lett. 11, 1369 (1999).
5. W. W. Bewley, H. Lee, I. Vurgaftman, et al., Appl. Phys. Lett. 76, 256 (2000).
6. R. Q. Yang, J. L. Bradshaw, J. D. Bruno, et al., Appl. Phys. Lett. 81, 397 (2002).
7. G. G. Zegrya, M. P. Mikhaǐlova, T. N. Danilova, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 33, 110 (1999) [Semiconductors 33, 350 (1999)].
8. S. V. Ivanov, K. D. Moiseev, A. M. Monakhov, et al., in Proceedings of 8th International Symposium on Nanostructures: Physics and Technology (St. Petersburg, 2000), p. 109.
9. P. Grabs, G. Richter, R. Fiederling, et al., Appl. Phys. Lett. 80, 3766 (2002).
10. A. G. Aronov and G. E. Pikus, Fiz. Tekh. Poluprovodn. (Leningrad) 10, 1177 (1976) [Sov. Phys. Semicond. 10, 698 (1976)].
11. R. Fiederling, M. Keim, G. Reuscher, et al., Nature 402, 787 (1999).
12. N. Samarth, H. Luo, J. K. Furdyna, et al., Appl. Phys. Lett. 54, 2680 (1989).
13. V. A. Solov'ev, I. V. Sedova, A. A. Toropov, et al., Fiz. Tekh. Poluprovodn. (St. Petersburg) 35, 431 (2001) [Semiconductors 35, 419 (2001)].
14. S. V. Ivanov, V. A. Solov'ev, K. D. Moiseev, et al., Appl. Phys. Lett. 78, 1655 (2001).
15. S. Ivanov, S. Sorokin, K. Moiseev, et al., Mater. Res. Soc. Symp. Proc. 692, H8.8.1-6 (2002).
16. V. A. Kaygorodov, I. V. Sedova, S. V. Sorokin, et al., Phys. Status Solidi B 229, 19 (2002).
17. Yu. P. Yakovlev, S. V. Ivanov, K. D. Moiseev, et al., Proc. SPIE 4651, 203 (2002).