Effect of strain and ordering on the band-gap energy of InGaP

Materials Science and Engineering: B

Volumn 88, Issue 2-3, 2002, Pages 139-142

  Novak J ^a   Hasenohrl S ^a   Kudela R ^a   Kucera, M ^a   Alonso, M I ^b   Garriga, M ^b  

^a INSTITUTE OF ELECTRICAL ENGINEERING   (Slovakia)

^b INSTITUT DE CIÈNCIA DE MATERIALS DE BARCELONA ICMAB CSIC   (Spain)

Author keywords

Band gap energy; Ellipsometry; InGaP; Ordering

Indexed keywords

ELLIPSOMETRY; ENERGY GAP; INTERPOLATION; LATTICE CONSTANTS; LOW TEMPERATURE EFFECTS; METALLORGANIC VAPOR PHASE EPITAXY; PHOTOLUMINESCENCE; STRAIN; X RAY DIFFRACTION ANALYSIS;

BAND-GAP ENERGY; INGAP; ORDERING;

SEMICONDUCTING INDIUM COMPOUNDS;

EID: 0037477997     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0921-5107(01)00869-8     Document Type: Conference Paper

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