Growth and characterisation of Hg1-xCdxTe (0.21 < x < 0.36) epilayers grown from Te-rich solution by the dipping technique

Journal of Crystal Growth

Volumn 165, Issue 1-2, 1996, Pages 19-24

  Gupta, S C ^a   Sitharaman, S ^a   Nagpal, Anjana ^a   Gautam, M ^a   Berlouis, L E A ^b  

^a SOLID STATE PHYSICS LABORATORY   (India)

^b UNIVERSITY OF STRATHCLYDE   (United Kingdom)

Author keywords

[No Author keywords available]

Indexed keywords

CHARACTERIZATION; COMPOSITION; EPITAXIAL GROWTH; LIQUID PHASE EPITAXY; MERCURY (METAL); MORPHOLOGY; SEMICONDUCTOR GROWTH; SOLUTIONS; SURFACES; VAPORS; X RAY CRYSTALLOGRAPHY;

DIPPING; ELECTROLYTE ELECTROREFLECTANCE; EPILAYERS GROWTH; MERCURY CADMIUM TELLURIDE; MERCURY VAPOR LOSS; ROCKING CURVE;

SEMICONDUCTING TELLURIUM COMPOUNDS;

EID: 0030564468     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/0022-0248(95)00993-0     Document Type: Article

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