Intersubband and intrasubband overlap integrals in AlxGa1-xN/GaN single-well heterostructures

Physics Letters, Section A: General, Atomic and Solid State Physics

Volumn 309, Issue 3-4, 2003, Pages 306-310

  Kalafi, M ^a   Asgari, A ^a  

^a UNIVERSITY OF TABRIZ   (Iran)

Author keywords

AlGaN GaN; Polar phonon; Scattering

Indexed keywords

ALUMINUM GALLIUM NITRIDE; CHEMICAL BONDS; GALLIUM NITRIDE; III-V SEMICONDUCTORS; MOLECULAR ORBITALS; SCATTERING;

AL MOLE FRACTIONS; ALGAN/GAN; ANALYTICAL RELATIONS; COUPLING COEFFICIENT; INTER-SUBBAND; NUMERICAL CALCULATION; OVERLAP INTEGRALS; SINGLE WELL;

WAVE FUNCTIONS;

ACOUSTICS; ARTICLE; CALCULATION; MATHEMATICAL ANALYSIS; PHYSICS; SEMICONDUCTOR;

EID: 0037463961     PISSN: 03759601     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0375-9601(03)00189-0     Document Type: Article

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