SCOPUS 정보 검색 플랫폼

Volumn 82, Issue 8, 2003, Pages 1218-1220

Why are arsenic clusters situated at dislocations in gallium arsenide?

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; BOUNDARY CONDITIONS; COMPUTER SIMULATION; LATTICE CONSTANTS; MOLECULAR DYNAMICS; RAMAN SCATTERING; TRANSMISSION ELECTRON MICROSCOPY;

FREE ELECTRONS;

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037463247 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.1555266 Document Type: Article

Times cited : (4)

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