Interactions of point defects with dislocations in n-type silicon-doped GaAs

Journal of Physics Condensed Matter

Volumn 14, Issue 34, 2002, Pages 7963-7971

  Lei, H ^a   Leipner, H S ^a   Engler, N ^b   Schreiber, J ^a  

^a MARTIN LUTHER UNIVERSITY HALLE WITTENBERG   (Germany)

^b MAX PLANCK INSTITUTE OF MICROSTRUCTURE PHYSICS   (Germany)

Author keywords

[No Author keywords available]

Indexed keywords

AGGLOMERATION; CATHODOLUMINESCENCE; COMPUTER SIMULATION; DIFFUSION; DISLOCATIONS (CRYSTALS); ELECTRONS; MATHEMATICAL MODELS; POINT DEFECTS; PRECIPITATION (CHEMICAL); RAMAN SCATTERING; SEMICONDUCTOR DOPING; SILICON;

FREE ELECTRON CONCENTRATION (FEC);

SEMICONDUCTING GALLIUM ARSENIDE;

EID: 0037008994     PISSN: 09538984     EISSN: None     Source Type: Journal    
DOI: 10.1088/0953-8984/14/34/315     Document Type: Article

References (21)