Alkali- and hydrogen ion sensing properties of LPCVD silicon oxynitride thin films

Thin Solid Films

Volumn 426, Issue 1-2, 2003, Pages 232-237

  Shin, Paik Kyun ^a   Mikolajick, Thomas ^b  

^a 203 601 Buchon Technopark   (South Korea)

^b INFINEON TECHNOLOGIES AG   (Germany)

Author keywords

Ion sensitivity; ISFET; LPCVD; NH3 N2O flow ratio; Silicon oxynitride

Indexed keywords

CAPACITANCE; CHEMICAL VAPOR DEPOSITION; ELECTRIC POTENTIAL; PH SENSORS; SILICA; SILICON WAFERS;

GAS FLOW;

THIN FILMS;

EID: 0037463218     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/S0040-6090(03)00041-5     Document Type: Article

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