메뉴 건너뛰기




Volumn , Issue 1255, 1996, Pages 313-318

Vergleichende untersuchungen zur anwendung von siliciumnitrid und tantalpentoxid als pH-sensitive schicht für ionensensitive feldeffekttransistoren

(3)  Mikolajick, Th a   Shin, P K a   Ryssel, H a  

a NONE

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0012546638     PISSN: 00835560     EISSN: None     Source Type: Book Series    
DOI: None     Document Type: Article
Times cited : (1)

References (6)
  • 2
    • 0029327277 scopus 로고
    • Development of a pH-sensitive ISFET Suitable for Fabrication in a Volume Production Environment
    • A. Garde, J. Alderman und W. Lane, Development of a pH-sensitive ISFET Suitable for Fabrication in a Volume Production Environment, Sensors and Actuators B, Vol. 26-27, 1995, S.341-344
    • (1995) Sensors and Actuators B , vol.26-27 , pp. 341-344
    • Garde, A.1    Alderman, J.2    Lane, W.3
  • 3
    • 0013358409 scopus 로고
    • 5 - Schicht für den Einsatz bei pH-Messungen
    • 5 - Schicht für den Einsatz bei pH-Messungen, VDI-Berichte, 509, 1984, S.275-279
    • (1984) VDI-Berichte , vol.509 , pp. 275-279
    • Klein, M.1    Kuisl, M.2
  • 5
    • 30844439431 scopus 로고
    • Low Pressure MOCVD of Tantalum Oxide
    • Adam Hilger, Bristol, Philadelphia, New York
    • N. Rausch und E.P. Burte, Low Pressure MOCVD of Tantalum Oxide, in: Insulating films on semiconductors, Adam Hilger, Bristol, Philadelphia, New York, 1991, S.199-202
    • (1991) Insulating Films on Semiconductors , pp. 199-202
    • Rausch, N.1    Burte, E.P.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.